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NX2020N2 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 NX2020N2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 NX2020N2 자료 제공

부품번호 NX2020N2 기능
기능 N-channel Trench MOSFET
제조업체 NXP Semiconductors
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NX2020N2 데이터시트, 핀배열, 회로
NX2020N2
30 V, N-channel Trench MOSFET
20 January 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 10.4 A
- 16.5 19.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NX2020N2 pdf, 반도체, 판매, 대치품
NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
102
ID
(A)
10
1
Limit RDSon = VDS/ID
017aaa541
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
10-1
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
235 270 K/W
[2] -
67 74 K/W
[3] -
33 36 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
© NXP N.V. 2014. All rights reserved
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NX2020N2 전자부품, 판매, 대치품
NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
25
ID
(A)
20
3.5 V
VGS = 10 V
15
10
5
017aaa544
3.2 V
3.0 V
2.9 V
2.7 V
2.6 V
2.5 V
10-2
ID
(A)
10-3
10-4
10-5
017aaa545
min typ max
0
01234
VDS (V)
Tj = 25 °C
10-6
0.0 0.5 1.0 1.5
Tj = 25 °C; VDS = 5 V
2.0 2.5
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
0.10
RDSon
(Ω)
0.08
2.5 V
VGS = 2.75 V
3.0 V
017aaa546
3.25 V
0.10
RDSon
(Ω)
0.08
017aaa547
0.06 0.06
0.04
0.02
3.5 V
4.5 V
3.75 V
10 V
0.04
0.02
Tj = 150 °C
Tj = 25 °C
0.00
0
5 10 15 20 25
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0.00
0 2 4 6 8 10
VGS (V)
ID = 8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
© NXP N.V. 2014. All rights reserved
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부품번호상세설명 및 기능제조사
NX2020N2

N-channel Trench MOSFET

NXP Semiconductors
NXP Semiconductors

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