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부품번호 | NX3020NAK 기능 |
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기능 | single N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
NX3020NAK
30 V, single N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 200 mA
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
1
ID
(A)
10-1
10-2
Limit RDSon = VDS/ID
NX3020NAK
30 V, single N-channel Trench MOSFET
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
017aaa660
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC; Tsp = 25 °C
10-3
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
350 400 K/W
[2] -
300 340 K/W
- - 115 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
4 / 15
4페이지 NXP Semiconductors
NX3020NAK
30 V, single N-channel Trench MOSFET
0.5
ID
(A)
0.4
0.3
0.2
10 V
4.5 V
017aaa663
3.5 V
3V
2.5 V
10-3
ID
(A)
10-4
10-5
017aaa664
min typ max
0.1
VGS = 2 V
0
01234
VDS (V)
Tj = 25 °C
10-6
0
0.5 1.0
Tj = 25 °C; VDS = 5 V
1.5 2.0
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
10
RDSon
(Ω)
8
2V
2.5 V
017aaa665
3V
12
RDSon
(Ω)
017aaa666
8
6
3.5 V
Tj = 150 °C
4
4.5 V
4
VGS = 10 V
2
Tj = 25 °C
0
0 0.1 0.2 0.3 0.4 0.5
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0 2 4 6 8 10
VGS (V)
ID = 0.15 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
7 / 15
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