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PDF NX7002BKS Data sheet ( Hoja de datos )
| Número de pieza | NX7002BKS | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX7002BKS
60 V, dual N-channel Trench MOSFET
12 May 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tsp = 25 °C
- - 330 mA
VGS = 10 V; Tamb = 25 °C
[1] - - 240 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 1 cm2.
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NX7002BKS
60 V, dual N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
[2] -
-
380 440 K/W
340 390 K/W
125 145 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
103 aaa-016993
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
11. Test information
NX7002BKS
60 V, dual N-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
t
006aaa812
12. Package outline
2.2 1.1
1.8 0.8
6 54
0.45
0.15
2.2 1.35
2.0 1.15
pin 1
index
12
0.65
1.3
Dimensions in mm
Fig. 18. Package outline TSSOP6 (SOT363)
3
0.3
0.2
0.25
0.10
14-10-03
13. Soldering
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
NX7002BKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NX7002BKS.PDF ] | |
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