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부품번호 | PESD18VF1BL 기능 |
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기능 | Ultra low capacitance bidirectional ESD protection diode | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 1— 2 September 2013
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
• Ultra low diode capacitance Cd = 0.35 pF
• High reverse standoff voltage VRWM = 18 V
• Very small voltage dependency of the capacitance
• ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
3. Applications
• NFC antenna protection
• Protection of high-speed data lines
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
Conditions
diode capacitance f = 1 MHz; VR = 0 V
reverse standoff
voltage
Min Typ Max Unit
0.28 0.35 0.5 pF
- - 18 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1 cathode (diode 1)
K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DFN1006-2 (SOD882)
12
sym045
NXP Semiconductors
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
Cs
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
450 Ω
RG 223/U
50 Ω coax
DUT
(DEVICE
UNDER
TEST)
10x
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
10
V
(kV) 8
6
4
2
0
-2
-10 0 10 20 30 40 50 60
t (ns)
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
70
Fig 3. ESD clamping test setup and waveforms
100 aaa-008158
VCL
(V)
60
2
V
(kV) 0
-2
-4
-6
-8
-10
-10 0 10 20 30 40 50 60 70
t (ns)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
20
VCL
(V)
-20
aaa-008159
20 -60
-20
-50
0
50 100 150 200 250 300
t (ns)
-100
-50 0 50 100 150 200 250 300
t (ns)
Fig 4. Clamped +8 kV pulse waveform (IEC 61000-4-2 Fig 5. Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
network)
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
11. Package outline
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
0.62
0.55
0.50
0.46
0.30 2
0.22
0.65
0.30
0.22 1
1.02
0.95
0.55
0.47
Dimensions in mm
cathode marking on top side (if applicable)
03-04-17
Fig 10. Package outline DFN1006-2 (SOD882)
12. Soldering
1.3
0.7 R0.05 (8×)
0.9
0.6 0.7 0.8
(2×) (2×) (2×)
0.3
(2×)
0.4
(2×)
0.5
(2×)
Fig 11. Reflow soldering footprint for DFN1006-2 (SOD882)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sod882_fr
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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PESD18VF1BL | Ultra low capacitance bidirectional ESD protection diode | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |