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부품번호 | PESD5V0F1BRLD 기능 |
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기능 | Femtofarad bidirectional ESD protection diode | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
Rev. 1 — 30 January 2014
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features and benefits
Bidirectional ESD protection of one line ESD protection up to 10 kV (contact)
and 15 kV (air)
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V
IEC 61000-4-2; level 4 (ESD)
Package height typ. 0.37 mm
at 30 ns and 8 kV
Very low leakage current: IRM < 1 nA AEC-Q101 qualified
1.3 Applications
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
SIM card protection
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
Antenna protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
VRWM
Cd
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ
--
- 0.4
Max Unit
5.5 V
0.55 pF
NXP Semiconductors
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per device
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 1 mA
Cd diode capacitance f = 1 MHz; VR = 0 V
VCL clamping voltage
IPP = 1 A
IPPM = 2.5 A
rdyn
dynamic resistance
IR = 10 A
Min Typ Max Unit
-
-
6
-
[1] -
[1] -
[2] -
- 5.5 V
1 100 nA
8 10 V
0.4 0.55 pF
- 11 V
- 15 V
1.5 -
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANSI/ESD STM5.5.1-2008.
0.5
Cd
(pF)
0.4
006aab598
0.3
0.2
−6.0
−2.0
2.0 6.0
VR (V)
Fig 3.
f = 1 MHz; Tamb = 25 C
Diode capacitance as a function of reverse
voltage; typical values
IPPM
IPP
-VCL -VBR -VRWM
IR
IRM
-IRM
-IR
VRWM VBR VCL
-
-IPP
-IPPM
+
006aab325
Fig 4. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0F1BRLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 January 2014
© NXP B.V. 2014. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
9. Package outline
PESD5V0F1BRLD
Femtofarad bidirectional ESD protection diode
0.65 0.4
0.55 max
0.30 2
0.22
0.65
1.05
0.95
0.30 1
0.22
0.55
0.45
Dimensions in mm
cathode marking on top side (if applicable)
12-05-01
Fig 7. Package outline DFN1006D-2 (SOD882D)
10. Soldering
1.4
0.2
solder lands
0.8
0.6 0.7
solder resist
(2×) (2×) (2×)
solder paste
Dimensions in mm
0.3
0.4
1
1.3
Fig 8. Reflow soldering footprint DFN1006D-2 (SOD882D)
sod882d_fr
PESD5V0F1BRLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 January 2014
© NXP B.V. 2014. All rights reserved.
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PESD5V0F1BRLD | Femtofarad bidirectional ESD protection diode | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |