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PDF MBRF50060R Data sheet ( Hoja de datos )
| Número de pieza | MBRF50060R | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive
MBRF50045 thru MBRF500100R
VRRM = 45 V - 100 V
IF(AV) = 500 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
IF(AV)
IFSM
VF
IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 250 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
500
3500
0.75
1
10
50
0.30
500
3500
0.78
1
10
50
0.30
500
3500
0.84
1
10
50
0.30
500
3500
0.84
1
10
50
0.30
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBRF50060R.PDF ] | |
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