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부품번호 | PESD5V0U1BLD 기능 |
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기능 | Ultra low capacitance bidirectional ESD protection diode | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
Rev. 2 — 27 July 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
Bidirectional ESD protection of one line AEC-Q101 qualified
Ultra small SMD plastic package
ESD protection up to 10 kV
Solderable side pads
IEC 61000-4-2; level 4 (ESD)
Package height typ. 0.37 mm
Ultra low leakage current: IRM = 5 nA
Ultra low diode capacitance Cd = 2.9 pF
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
High-speed data lines
Communication systems
Portable electronics
1.4 Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
[1] The marking bar indicates pin 1.
Simplified outline
[1]
12
Transparent
top view
Graphic symbol
12
sym045
NXP Semiconductors
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 5 mA
Cd diode capacitance f = 1 MHz; VR = 0 V
rdyn
dynamic resistance
IR = 10 A
Min Typ Max
--5
- 5 100
5.5 7
9.5
- 2.9 3.5
[1] -
0.8 -
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
Unit
V
nA
V
pF
3.0
Cd
(pF)
2.6
006aab036
2.2
1.8
012345
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 C
Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 5. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
9. Package outline
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
0.65
0.55
0.30 2
0.22
0.30 1
0.22
0.55
0.45
Dimensions in mm
Fig 8. Package outline SOD882D
0.4
max
0.65
1.05
0.95
cathode marking on top side
10-08-06
10. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
PESD5V0U1BLD SOD882D 2 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Packing quantity
10 000
-315
PESD5V0U1BLD
Product data sheet
1.4
0.2
solder lands
0.8
0.6 0.7
solder resist
(2×) (2×) (2×)
solder paste
Dimensions in mm
0.3
0.4
1
1.3
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOD882D
sod882d_fr
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 July 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0U1BL | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |