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PESD5V0V1BCSF 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PESD5V0V1BCSF은 전자 산업 및 응용 분야에서
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부품번호 PESD5V0V1BCSF 기능
기능 Ultra low profile bidirectional very low capacitance ESD protection diode
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PESD5V0V1BCSF 데이터시트, 핀배열, 회로
PESD5V0V1BCSF
Ultra low profile bidirectional very low capacitance
ESD protection diode
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Very low diode capacitance Cd = 5.3 pF
ESD protection up to 20 kV according to IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
Cd
reverse standoff voltage
5
diode capacitance
f = 1 MHz; VR = 0 V [1] 4
-5
5.3 6
V
pF
[1] This parameter is guaranteed by design.




PESD5V0V1BCSF pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM
reverse leakage
VRWM = 5 V
current
VCL
VBR
Cd
LS
Rdyn
clamping voltage
breakdown voltage
diode capacitance
series inductance
dynamic resistance
IPP = 0.5 A
IPP = 1 A
IR = 1 mA
IR = 1 mA
f = 1 MHz
VR = 0 V
VR = 2.5 V
VR = 5 V
Min Typ Max Unit
5
-
[1][2] -
[1][2] -
[3] 6
[3] 10
[4]
4
-
-
[5] -
[6] -
- 5V
1 100 nA
- 11.5 V
- 12.8 V
- 10 V
- 6 V
5.3 6
4.3 5
4.1 4.7
0.05 -
2.5 -
pF
pF
pF
nH
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1 to pin 2.
[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
[4] This parameter is guaranteed by design.
[5] Calculated from S-parameter values.
[6] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0V1BCSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0V1BCSF 전자부품, 판매, 대치품
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
7. Application information
The PESD5V0V1BCSF is designed for the protection of one data or signal line from the
damage caused by ESD and/or other surge pulses. The device may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
It provides protection against surges with up to 8 W per line.
line to be protected
PESD5V0V1BCSF
GND
018aaa139
Fig 8. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Avoid running protected conductors in parallel with unprotected conductors.
4. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
5. Minimize the length of the transient return path to ground.
6. Avoid using shared transient return paths to a common ground point.
7. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0V1BCSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0V1BCSF

Ultra low profile bidirectional very low capacitance ESD protection diode

NXP Semiconductors
NXP Semiconductors

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