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부품번호 | PESD5V0V1BLD 기능 |
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기능 | Very low capacitance bidirectional ESD protection diode | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
Bidirectional ESD protection of one line Low clamping voltage: VCL = 12.5 V
Ultra small SMD plastic package
Ultra low leakage current: IRM < 1 nA
Solderable side pads
ESD protection up to 30 kV
Package height typ. 0.37 mm
IEC 61000-4-2; level 4 (ESD)
Very low diode capacitance: Cd = 11 pF IEC 61000-4-5 (surge); IPP = 4.8 A
Max. peak pulse power: PPP = 45 W AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 11 13 pF
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
120
IPP
(%)
80
40
100 % IPP; 8 μs
001aaa630
e−t
50 % IPP; 20 μs
0
0 10 20 30 40
t (μs)
Fig 2. 8/20 μs pulse waveform according to
IEC 61000-4-5
6. Characteristics
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 3. ESD pulse waveform according to
IEC 61000-4-2
t
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
IRM
VBR
Cd
VCL
rdyn
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
VRWM = 5 V
IR = 5 mA
f = 1 MHz;
VR = 0 V
IPP = 4.8 A
IR = 10 A
Min Typ Max Unit
- - 5V
-
< 1 10
nA
5.8 6.8 7.8 V
- 11 13 pF
[1] -
[2] -
- 12.5 V
0.2 -
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0V1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
ESD TESTER
acc. to IEC 61000-4-2
CZ = 150 pF; RZ = 330 Ω
RZ
CZ
450 Ω
RG 223/U
50 Ω coax
DUT
(DEVICE
UNDER
TEST)
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 10 A/div
horizontal scale = 15 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 9. ESD clamping test setup and waveforms
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aab609
PESD5V0V1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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PESD5V0V1BL | Very low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0V1BLD | Very low capacitance bidirectional ESD protection diode | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |