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부품번호 | PESD5V0X1BCAL 기능 |
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기능 | Extremely low capacitance bidirectional ESD protection diode | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 1 February 2012
Product data sheet
1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed
to protect one signal line from the damage caused by ESD and other transients. The
combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection.
1.2 Features and benefits
Bidirectional ESD protection of one line ESD protection up to 15 kV
Extremely low capacitance:
IEC 61000-4-2; level 4 (ESD)
Cd = 0.85 pF
Low clamping voltage: VCL = 17 V
Ultra low leakage current: IRM = 1 nA
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
SIM card protection
USB, High-Definition Multimedia
Interface (HDMI), FireWire
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
VRWM
Cd
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5.5 V
- 0.85 0.95 pF
NXP Semiconductors
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per device
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5.5 V
VBR breakdown voltage IR = 10 mA
Cd diode capacitance f = 1 MHz; VR = 0 V
VCL clamping voltage
IPPM = 1.8 A
rdyn
dynamic resistance
IR = 10 A
Min Typ Max Unit
-
-
8.1
-
[1] -
[2] -
- 5.5 V
<1 10 nA
9.8 12.3 V
0.85 0.95 pF
- 17 V
0.5 -
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
1.0
Cd
(pF)
0.9
006aac886
0.8
0.7
0.6
0.5
012345
VR (V)
Fig 3.
f = 1 MHz; Tamb = 25 C
Diode capacitance as a function of reverse
voltage; typical values
IPPM
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
−IPPM
+
006aab325
Fig 4. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0X1BCAL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 February 2012
© NXP B.V. 2012. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
9. Package outline
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
0.62
0.55
0.50
0.46
0.30 2
0.22
0.65
0.30
0.22 1
1.02
0.95
0.55
0.47
Dimensions in mm
cathode marking on top side (if applicable)
03-04-17
Generic drawing for SOD882 package. This product has no cathode marking.
Fig 7. Package outline PESD5V0X1BCAL (SOD882)
10. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
PESD5V0X1BCAL SOD882 2 mm pitch, 8 mm tape and reel
Packing quantity
10 000
-315
[1] For further information and the availability of packing methods, see Section 14.
PESD5V0X1BCAL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 February 2012
© NXP B.V. 2012. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |