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PDF IXYH30N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYH30N120C3 | |
| Descripción | High-Speed IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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1200V XPTTM
GenX3TM IGBTs
High-Speed IGBT
for 20-50 kHz Switching
IXYP30N120C3
IXYH30N120C3
VCES = 1200V
IC110 = 30A
VCE(sat) 3.3V
tfi(typ) = 88ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
75 A
30 A
145 A
20 A
400 mJ
ICM = 60
VCE VCES
500
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in
3g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
750 μA
100 nA
3.3 V
3.7 V
TO-220 (IXYP)
GC E
Tab
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100385D(9/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
4.5 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
4.0 VCE = 600V
3.5
I C = 60A
3.0
2.5
2.0
1.5
I C = 30A
1.0
0.5
10 15 20 25 30 35 40 45 50
RG - Ohms
27
24
21
18
15
12
9
6
3
0
55
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5.0
4.5 Eoff
Eon - - - -
4.0 RG = 10Ω , VGE = 15V
VCE = 600V
3.5
3.0 I C = 60A
2.5
2.0
1.5
1.0 IC = 30A
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
20
16
12
8
4
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220 260
200
tfi
td(off) - - - -
240
180
RG = 10Ω , VGE = 15V
220
VCE = 600V
160 200
140 180
120
TJ = 150ºC
160
100 140
80 120
60
TJ = 25ºC
100
40 80
20 60
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYP30N120C3
IXYH30N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.0
Eoff Eon - - - -
2.5 RG = 10Ω , VGE = 15V
VCE = 600V
20
16
2.0
TJ = 150ºC
12
1.5 8
TJ = 25ºC
1.0 4
0.5 0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
220 550
200 t f i
td(off) - - - -
180 TJ = 150ºC, VGE = 15V
VCE = 600V
160
500
450
400
140
120 I C = 30A
350
300
100 250
80 I C = 60A
60
200
150
40 100
20 50
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
180 180
160 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
140 VCE = 600V
170
160
120
I C = 30A
100
150
140
80 130
60
I C = 60A
40
120
110
20
25
50 75 100
TJ - Degrees Centigrade
125
100
150
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYH30N120C3.PDF ] | |
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