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14N50 데이터시트 PDF




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부품번호 14N50 기능
기능 N-CHANNEL POWER MOSFET
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14N50 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
14N50
Preliminary
14A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 14N50 is an N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 14N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction and electronic lamp ballast
based on half bridge topology.
1
FEATURES
* RDS(ON) < 0.42@VGS = 10V
* Ultra low gate charge (typical 43nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N50L-TQ2-T
14N50G-TQ2-T
14N50L-TQ2-R
14N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-263
TO-263
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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14N50 pdf, 반도체, 판매, 대치품
14N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 1mA
500
V
Drain-Source Leakage Current
IDSS VDS = 500V, VGS = 0V
10 μA
Gate-Source Leakage Current
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250mA,Referenced to 25°C
100 nA
-100 nA
0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 100μA
3 3.75 4.5 V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 7A
0.34 0.42
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0MHz
2000
238
55
pF
pF
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=400V, ID=12A,
VGS=10 V (Note 1,2)
VDD =250V, ID =14A,
RG =25(Note 1,2)
69 92 nC
12 nC
31 nC
24 nS
70 nS
54 nS
50 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 14A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.6 V
14 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
56 A
Reverse Recovery Time
trr VGS = 0V, IS = 14A,
Reverse Recovery Charge
QRR dIF / dt =100A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
470 nS
3.1 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N50 전자부품, 판매, 대치품
14N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N50

N-CHANNEL POWER MOSFET

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