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BLL6H1214P2S-250 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL6H1214P2S-250
기능 LDMOS L-band radar power module
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BLL6H1214P2S-250 데이터시트, 핀배열, 회로
BLL6H1214P2S-250
LDMOS L-band radar power module
Rev. 1 — 12 August 2014
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power module intended for L-band radar applications in the frequency
range from 1.2 GHz to 1.4 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 1.8 ms; = 30 %; IDq = 200 mA; Pi = 26 dBm; in a
class-AB production test circuit.
Test signal
f
(MHz)
VDS PL
(V) (W)
Gp add tr
tf
(dB) (%) (ns) (ns)
pulsed RF
1195 to 1405
45 190 to 290
27 48 15 5
1.2 Features and benefits
Input/output 50 matched
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz




BLL6H1214P2S-250 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL6H1214P2S-250
LDMOS L-band radar power module
7.1 Ruggedness in class-AB operation
The BLL6H1214P2S-250 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 45 V;
IDq = 200 mA; Pi = 26 dBm; tp = 1.8 ms; = 30 %.
8. Test information
8.1 Graphical data

*S
G%



*S



DDD 
 Ș'
 
 



Ș'



 
     
3/ G%P
VDS = 45 V; IDq = 200 mA.
(1) f = 1195 MHz
(2) f = 1300 MHz
(3) f = 1405 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
BLL6H1214P2S-250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLL6H1214P2S-250 전자부품, 판매, 대치품
NXP Semiconductors
BLL6H1214P2S-250
LDMOS L-band radar power module
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 7. Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
L-band
Long wave band
MTF
Median Time to Failure
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 8. Revision history
Document ID
BLL6H1214P2S-250 v.1
Release date
20140812
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BLL6H1214P2S-250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLL6H1214P2S-250

LDMOS L-band radar power module

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