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BLL8H0514-25 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL8H0514-25
기능 Power LDMOS transistor
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BLL8H0514-25 데이터시트, 핀배열, 회로
BLL8H0514-25
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf
(ns)
pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
86
1200 to 1400 300 10 50 25 19 10 50 0.05
86
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
Simplified outline Graphic symbol

[1]  


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BLL8H0514-25 pdf, 반도체, 판매, 대치품
NXP Semiconductors
7.3 Application circuit
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BLL8H0514-25
Power LDMOS transistor
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Fig 2.
Printed-Circuit Board (PCB) material: Duroid 6006 with r = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Component layout
Table 9. List of components
See Figure 2 for component layout.
Component
Description
C1, C6, C7, C12
multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C3, C4, C8, C9
multilayer ceramic chip capacitor
C5, C10
multilayer ceramic chip capacitor
C11 electrolytic capacitor
R1 SMD resistor
Value
56 pF
10 F, 25 V
100 pF
1 nF
68 F, 63 V
10
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
Remarks
[1]
[1]
[2]
SMD 0603
BLL8H0514-25
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H0514-25 전자부품, 판매, 대치품
NXP Semiconductors
9. Package outline
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Power LDMOS transistor
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BLL8H0514-25
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H0514-25

Power LDMOS transistor

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