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BLL8H0514L-130 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL8H0514L-130
기능 LDMOS driver transistor
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BLL8H0514L-130 데이터시트, 핀배열, 회로
BLL8H0514L-130;
BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf
(ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0
15 8
1200 to 1400 300 10 50 130 17 10 50 0
15 8
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range




BLL8H0514L-130 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLL8H0514L-130 and BLL8H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 s;
= 10 %.
7.2 Impedance information
Table 8.
f
(MHz)
1200
1300
1400
Typical impedance
ZS
()
1.21 j3.44
1.56 j4.49
2.21 j4.86
ZL
()
2.40 j0.63
2.30 j0.87
2.00 j1.71
JDWH
=6
Fig 1. Definition of transistor impedance
GUDLQ
=/
DDI
BLL8H0514L-130_0514LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H0514L-130 전자부품, 판매, 대치품
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
Table 9. List of components
See Figure 7 for component layout.
Component
Description
C1 multilayer ceramic chip capacitor
C2, C11
multilayer ceramic chip capacitor
C3, C4, C6, C9, C10 multilayer ceramic chip capacitor
C5, C7, C8
multilayer ceramic chip capacitor
C12 electrolytic capacitor
C13 multilayer ceramic chip capacitor
R1 SMD resistor
R2 wirewound lead resistor
Value
10 F, 50 V
1 nF
100 pF
43 pF
220 F, 63 V
1 nF
10
2.61 , 0.25 W
Remarks
[1]
[2]
[2]
[3] fitted vertically in
series with R2
SMD 0603
fitted in series
with C13
[1] American Technical Ceramics type 700A or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
BLL8H0514L-130_0514LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H0514L-130

LDMOS driver transistor

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