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BLL8H1214L-250 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL8H1214L-250
기능 LDMOS L-band radar power transistor
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BLL8H1214L-250 데이터시트, 핀배열, 회로
BLL8H1214L-250;
BLL8H1214LS-250
LDMOS L-band radar power transistor
Rev. 2 — 13 January 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Test signal
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55
15
5
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range




BLL8H1214L-250 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLL8H1214L-250 and BLL8H1214LS-250 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 100 mA; PL = 250 W; tp = 300 s; = 10 %.
7.2 Impedance information
Table 8. Typical impedance
Typical values unless otherwise specified.
f
(GHz)
ZS
()
1.2 1.268 j2.623
1.3 2.193 j2.457
1.4 2.359 j2.052
ZL
()
2.987 j1.664
2.162 j1.326
1.604 j1.887
JDWH
=6
GUDLQ
=/
DDI
Fig 1. Definition of transistor impedance
BLL8H1214L-250_1214LS-250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 13

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BLL8H1214L-250 전자부품, 판매, 대치품
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor

Ș'




DDO
 
 


*S
G%


Ș'
*S
DDO 
Ș'



  

 


       
3/ :






 
I 0+]
VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 5. Drain efficiency as a function of output power;
typical values
PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %;
IDq = 100 mA.
Fig 6. Power gain and drain efficiency as function of
frequency; typical values

5/LQ
G%

DDO








 
I 0+]
PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
Fig 7. Input return loss as a function of frequency; typical value
BLL8H1214L-250_1214LS-250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H1214L-250

LDMOS L-band radar power transistor

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