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BLL8H1214L-500 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLL8H1214L-500
기능 LDMOS L-band radar power transistor
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BLL8H1214L-500 데이터시트, 핀배열, 회로
BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.2 to 1.4
50 500 17
50 20
6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range




BLL8H1214L-500 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.2 Impedance information
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f
(GHz)
ZS
()
1.2 1.268 j2.623
1.3 2.193 j2.457
1.4 2.359 j2.052
ZL
()
2.987 j1.664
2.162 j1.326
1.604 j1.887
JDWH
=6
Fig 1. Definition of transistor impedance
GUDLQ
=/
DDI
7.3 Test circuit
Table 9. List of components
For test circuit see Figure 2.
Component
Description
C1 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C3, C4
multilayer ceramic chip capacitor
C5, C11, C12
multilayer ceramic chip capacitor
C6 multilayer ceramic chip capacitor
C7, C8, C10
multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
C13 electrolytic capacitor
R1 SMD resistor
R2 metal film resistor
Value
22 F, 35 V
51 pF
100 pF
1 nF
47 pF
51 pF
100 pF
10 F, 63 V
56
51
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
Remarks
[1]
[1]
[2]
[1]
[3]
[3]
SMD 0603
BLL8H1214L-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H1214L-500 전자부품, 판매, 대치품
NXP Semiconductors
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.2 Performance curves measured with = 10 %, tp = 300 s and Th = 65 C

3/
:

DDD
  

*S
G%

DDD



 
 

     
3L :
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 8. Output power as a function of input power;
typical values

Ș'




DDD







      
3/ :
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 9. Power gain as a function of output power;
typical values

*S
G%

DDD 
Ș'

Ș' 
 
*S
 
 

       
3/ :





 
I 0+]


VDS = 50 V; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 10. Drain efficiency as a function of output power;
typical values
VDS = 50 V; PL = 500 W; IDq = 100 mA.
Fig 11. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLL8H1214L-500

LDMOS L-band radar power transistor

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