|
|
|
부품번호 | PESD5V0S1UL 기능 |
|
|
기능 | Unidirectional ESD protection diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PESDxS1UL series
Unidirectional ESD protection diodes
Rev. 3 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra
small Surface Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: PPP = 150 W
Low clamping voltage: VCL = 20 V
AEC-Q101 qualified
Ultra low leakage current: IRM < 700 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); IPP up to 15 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Parallel ports
Communication systems
High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
reverse standoff voltage
PESD3V3S1UL
- - 3.3 V
PESD5V0S1UL
- - 5.0 V
PESD12VS1UL
- - 12 V
PESD15VS1UL
- - 15 V
PESD24VS1UL
- - 24 V
Cd diode capacitance
PESD3V3S1UL
f = 1 MHz; VR = 0 V
-
207 300 pF
PESD5V0S1UL
- 152 200 pF
PESD12VS1UL
- 38 75 pF
PESD15VS1UL
- 32 70 pF
PESD24VS1UL
- 23 50 pF
NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
120
IPP
(%)
80
40
100 % IPP; 8 μs
001aaa630
e−t
50 % IPP; 20 μs
0
0 10 20 30 40
t (μs)
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
IRM reverse leakage current
PESD3V3S1UL
VRWM = 3.3 V
PESD5V0S1UL
VRWM = 5.0 V
PESD12VS1UL
VRWM = 12 V
PESD15VS1UL
VRWM = 15 V
PESD24VS1UL
VRWM = 24 V
VBR breakdown voltage
IR = 5 mA
PESD3V3S1UL
PESD5V0S1UL
PESD12VS1UL
PESD15VS1UL
PESD24VS1UL
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- - 12 V
- - 15 V
- - 24 V
-
0.7 2
A
-
0.1 1
A
- < 1 50 nA
- < 1 50 nA
- < 1 50 nA
[1]
5.2 5.6 6.0 V
6.4 6.8 7.2 V
14.7 15.0 15.3 V
17.6 18.0 18.4 V
26.5 27.0 27.5 V
PESDXS1UL_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 October 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
PESDxS1UL series
Unidirectional ESD protection diodes
10
IRM
IRM(25°C)
1
001aaa729
(1)
(2)
I
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
10−1
−100
−50
0
50 100 150
Tj (°C)
(1) PESD3V3S1UL; VRWM = 3.3 V
(2) PESD5V0S1UL; VRWM = 5.0 V
IR is less than 15 nA at 150 C for:
PESD12VS1UL; VRWM = 12 V
PESD15VS1UL; VRWM = 15 V
PESD24VS1UL; VRWM = 24 V
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
−IPP
006aaa407
Fig 8. V-I characteristics for a unidirectional ESD
protection diode
PESDXS1UL_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 October 2011
© NXP B.V. 2011. All rights reserved.
7 of 15
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ PESD5V0S1UL.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PESD5V0S1UA | (PESD5V0S1UA / PESD12VS1UA) Unidirectional ESD Protection | NXP Semiconductors |
PESD5V0S1UB | (PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |