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Número de pieza | K2007 | |
Descripción | MOSFET ( Transistor ) - 2SK2007 | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K2007 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK2007
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
4 Pulse Test
3
20 A
2
10 A
1
ID = 5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source On State
Resistance vs. Temperature
0.5
0.4 VGS = 10V
Pulse Test
0.3
ID = 20 A
0.2
0.1 5 A
10 A
0
–40 0
40 80 120
Case Temperature Tc (°C)
160
2SK2007
Static Drain to Source On State
Resistance vs. Drain Current
5
2
1
0.5
VGS = 10 V
0.2
0.1
0.05
1
15 V
2 5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
100
–25°C
30 Tc = 25°C
10
3 75°C
1 VDS = 10 V
Pulse Test
0.3
0.1
0.1
0.3 1 3 10 30
Drain Current ID (A)
100
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K2007.PDF ] |
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