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BLP10H605 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BLP10H605은 전자 산업 및 응용 분야에서
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부품번호 BLP10H605 기능
기능 Broadband LDMOS driver transistor
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BLP10H605 데이터시트, 핀배열, 회로
BLP10H605
Broadband LDMOS driver transistor
Rev. 3 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW 860
VDS
PL
Gp
D
(V) (W) (dB) (%)
50 5
22.4 59.6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications




BLP10H605 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
Table 7. AC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Crs
Ciss
Coss
feedback capacitance
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 0 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ
- 0.07
- 6.8
- 2.24
Max Unit
- pF
- pF
- pF
Table 8. RF characteristics
Test signal: CW pulsed; tp = 50 s; = 10 %; f = 860 MHz; RF performance at VDS = 50 V;
IDq = 30 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit [1].
Symbol Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 5 W
D
drain efficiency
PL = 5 W
20.2 22.4 27.4 dB
57 59.6 -
%
[1] The industrial test method is performed on special hardware to accommodate the requirements of
production. The test results in this table are correlated to correspond with a performance in the application.
8. Test information
8.1 Ruggedness in class-AB operation
The BLP10H605 is capable of withstanding a load mismatch corresponding to
VSWR = 35 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 30 mA; PL = 5 W; f = 860 MHz.
8.2 Test circuit
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Fig 2.
Printed-Circuit Board (PCB): Rogers RO4350; r = 3.48; height = 0.762 mm; thickness copper
plating = 35 m.
See Table 9 for a list of components.
Component layout
BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLP10H605 전자부품, 판매, 대치품
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
9. Package outline
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BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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