BLP15M7160P Datasheet PDF - NXP Semiconductors
| Part Number | BLP15M7160P | |
| Description | Power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLP15M7160P
Power LDMOS transistor
Rev. 3 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 C in a common source test circuit.
Test signal
f
VDS
IDq
PL(AV)
(MHz) (V) (mA) (W)
pulsed, class-B
860
28 100
-
PL(M)
(W)
160
Gp
(dB)
20
D
(%)
62
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range
Single product Doherty applications
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NXP Semiconductors
7.3 Graphical data
7.3.1 1-Tone pulsed
*S
G%
BLP15M7160P
Power LDMOS transistor
DDD
Ș'
Ș'
*S
3/ :
VDS = 28 V; IDq = 200 mA; f = 860 MHz.
Fig 2. Power gain and drain efficiency as function of output power; typical values
*S
G%
DDD
Ș'
DDD
3/ :
VDS = 28 V; f = 860 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 400 mA
(5) IDq = 600 mA
(6) IDq = 800 mA
Fig 3. Power gain as a function of output power;
typical values
3/ :
VDS = 28 V; f = 860 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 400 mA
(5) IDq = 600 mA
(6) IDq = 800 mA
Fig 4. Drain efficiency as a function of output power;
typical values
BLP15M7160P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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