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부품번호 | BLP8G10S-45PG 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 1 — 25 July 2013
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Application performance
Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production
circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960 28 2.5 20.8 19.8 49 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation (700 MHz to 1000 MHz)
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
W-CDMA
LTE
GSM
NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance BLP8G10S-45P
Measured load-pull data. Typical values per section unless otherwise specified.
f
(MHz)
ZS [1]
()
ZL [1][2]
()
BLP8G10S-45P
720
11.6 j12.9
5.44 + j6.34
746
14.8 j9.2
4.51 + j6.03
757
15.3 j4.6
4.23 + j6.15
791
13.3 j1.6
3.99 + j5.62
820
6.5 j1.1
3.87 + j5.37
869
5.2 j2.4
4.25 + j4.49
894
4.4 j3.0
3.69 + j4.89
925
3.8 j3.9
3.49 + j4.72
942
3.6 j4.2
3.06 + j4.46
960
3.6 j4.7
3.29 + j4.04
BLP8G10S-45PG
720
13.2 j7.7
4.34 + j5.10
746
11.8 j4.6
4.58 + j4.94
757
10.4 j3.7
4.50 + j5.34
791
9.8 j2.5
4.19 + j4.87
869
5.0 j4.0
4.27 + j3.42
881
4.6 j4.2
3.62 + j3.45
894
4.2 j4.7
3.77 + j3.29
925
3.8 j5.6
3.60 + j3.15
942
3.7 j5.8
3.29 + j2.89
961
3.6 j6.4
3.36 + j2.47
[1] ZS and ZL defined in Figure 1.
[2] ZL is selected for maximum efficiency.
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
BLP8G10S-45P_8G10S-45PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 July 2013
© NXP B.V. 2013. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
*S
G%
DDD
3/:
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;
fc = 960 MHz
(1) Tcase = 15 C
(2) Tcase = 25 C
(3) Tcase = 55 C
(4) Tcase = 85 C
Fig 6. Power gain as a function of output power per
section; typical values
Ș'
DDD
3/:
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;
fc = 960 MHz
(1) Tcase = 15 C
(2) Tcase = 25 C
(3) Tcase = 55 C
(4) Tcase = 85 C
Fig 7. Drain efficiency as a function of output power
per section; typical values
$&350
G%F
DDD
3/:
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz
(1) Tcase = 15 C
(2) Tcase = 25 C
(3) Tcase = 55 C
(4) Tcase = 85 C
Fig 8. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values
BLP8G10S-45P_8G10S-45PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 July 2013
© NXP B.V. 2013. All rights reserved.
7 of 13
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부품번호 | 상세설명 및 기능 | 제조사 |
BLP8G10S-45P | Power LDMOS transistor | NXP Semiconductors |
BLP8G10S-45PG | Power LDMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |