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부품번호 | BLP8G27-10 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
Pulsed CW
2700 110 28 33
17 19 -
2-carrier W-CDMA [1]
2700 110 28 33
17 22 47.3
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX
NXP Semiconductors
7. Application information
7.1 Application circuit
BLP8G27-10
Power LDMOS transistor
&
&
5
&
&
&
5 &
&
&
&
&
4
&
&
& &
&
&
%/3*
5% *
DDD
Fig 1.
Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.5; thickness = 0.508 mm; thickness copper
plating = 35 m.
See Table 8 for list of components.
Component layout
Table 8. List of components
See Figure 1 for component layout.
Component Description
C1 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C3 multilayer ceramic chip capacitor
C4 multilayer ceramic chip capacitor
C5 multilayer ceramic chip capacitor
C6 multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8 multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
R1 chip resistor
R2 chip resistor
Q1 transistor
Value
10 F
1 F
15 pF
2 pF
1.3 pF
0.5 pF
1.8 pF
0.3 pF
0.9 pF
5.1
0
-
Remarks
Murata
Murata
ATC 600F
ATC 600F
ATC 600F
ATC 600F
ATC 600F
ATC 600F
ATC 600F
BLP8G27-10
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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4페이지 NXP Semiconductors
BLP8G27-10
Power LDMOS transistor
8. Test information
8.1 Ruggedness in class-AB operation
The BLP8G27-10 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 110 mA; PL = 2 W; frequency from 700 MHz to 2700 MHz.
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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