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PDF BLS7G2325L-105 Data sheet ( Hoja de datos )
| Número de pieza | BLS7G2325L-105 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLS7G2325L-105
Power LDMOS transistor
Rev. 2 — 19 July 2011
Product data sheet
1. Product profile
1.1 General description
105 W LDMOS power transistor for S-band radar applications at frequencies from
2300 MHz to 2500 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS
PL(AV)
Gp
D
(MHz)
(mA) (V)
(W)
(dB) (%)
Pulse CW
2300 to 2500 900 30 110
16.5 55
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz
frequency range
1 page  
NXP Semiconductors
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLS7G2325L-105
Power LDMOS transistor
SOT502A
D
A
F
3
D1
U1
q
1
B
C
L
c
H U2
A
2
b
p E1
w1 M A M B M
E
w2 M C M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
D D1 E E1 F
H
L
p
Q q U1 U2 w1
mm
4.72 12.83 0.15 20.02 19.96 9.50
3.43 12.57 0.08 19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
27.94 34.16
33.91
9.91
9.65
0.25
inches
0.186
0.135
0.505 0.006
0.495 0.003
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
0.067
0.057
1.100
1.345 0.390
1.335 0.380
0.01
w2
0.51
0.02
OUTLINE
VERSION
SOT502A
IEC
REFERENCES
JEDEC
JEITA
Fig 5. Package outline SOT502A
BLS7G2325L-105
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 19 July 2011
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
© NXP B.V. 2011. All rights reserved.
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