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부품번호 | BLS7G2729LS-350P 기능 |
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기능 | LDMOS S-band radar power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 5 — 16 May 2014
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 2.9 GHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W) (dB) (%) (ns) (ns)
pulsed RF
2.7 to 2.9 32 350 13 50 8
5
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 s; = 10 %.
7.2 Impedance information
Table 8.
f
GHz
2.7
2.8
2.9
Typical impedance
ZS[1]
2.8 j8.7
3.9 j8.2
4.8 j9.3
[1] Impedances are taken at a single halve of the push-pull transistor
ZL[1]
1.8 j5.1
2.1 j5.4
1.5 j5.7
JDWH
=6
JDWH
GUDLQ
=/
GUDLQ
DDN
Fig 1. Definition of transistor impedance
BLS7G2729L-350P_LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 16 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
*S
G%
DDD
5/LQ
G%
DDD
I0+]
I0+]
Fig 7.
VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %;
PL = 350 W.
Power gain as a function of frequency; typical
values
Fig 8.
VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %;
PL = 350 W.
Input return loss as a function of frequency;
typical values
BLS7G2729L-350P_LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 16 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |