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2N7590T3 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 2N7590T3은 전자 산업 및 응용 분야에서
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부품번호 2N7590T3 기능
기능 RADIATION HARDENED POWER MOSFET
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2N7590T3 데이터시트, 핀배열, 회로
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
PD-96930C
2N7590T3
IRHYS67134CM
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67134CM 100K Rads (Si)
IRHYS63134CM 300K Rads (Si)
RDS(on)
0.090
0.090
ID
19A
19A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
19
12
76
75
0.6
±20
67
19
7.5
7.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
01/31/14




2N7590T3 pdf, 반도체, 판매, 대치품
IRHYS67134CM, 2N7590T3
Pre-Irradiation
1000
100
10
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
0.1
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
5.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
10
1.0
5
VDS = 50V
6s PUL1S5E WIDTH
6789
VGS, Gate-to-Source Voltage (V)
10
Fig 3. Typical Transfer Characteristics
4
3.0
ID = 19A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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2N7590T3 전자부품, 판매, 대치품
Pre-Irradiation
IRHYS67134CM, 2N7590T3
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
DC
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
120
ID
100
TOP
8.5A
12A
BOTTOM 19A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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2N7590T3

RADIATION HARDENED POWER MOSFET

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