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IRL5Y024CM 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRL5Y024CM은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IRL5Y024CM 기능
기능 N-CHANNEL POWER MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


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IRL5Y024CM 데이터시트, 핀배열, 회로
PD - 94018A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y024CM
55V, N-CHANNEL
Product Summary
Part Number
IRL5Y024CM
BVDSS
55V
RDS(on)
0.069
ID
17A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
17
11 A
68
35 W
0.28
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±16 V
Single Pulse Avalanche Energy
49
mJ
Avalanche Current
11 A
Repetitive Avalanche Energy
3.5 mJ
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
4.0
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/27/00




IRL5Y024CM pdf, 반도체, 판매, 대치품
IRL5Y024CM
1000
800
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600 Ciss
400
200
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 ID = 11A
12
9
VDS = 44V
VDS = 27V
VDS = 11V
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.2
VGS = 0 V
0.8 1.4 2.0 2.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRL5Y024CM 전자부품, 판매, 대치품
Footnotes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 0.8mH
Peak IAS = 11A, RG= 25
IRL5Y024CM
ƒ ISD 11A, di/dt 222 A/µs,
VDD 55V, TJ 150°C
„ Pulse width 400 µs; Duty Cycle 2%
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
www.irf.com
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IRL5Y024CM

N-CHANNEL POWER MOSFET

International Rectifier
International Rectifier

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