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부품번호 | MGA-425P8 기능 |
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기능 | PHEMT Power Amplifier | ||
제조업체 | AVAGO | ||
로고 | |||
전체 15 페이지수
MGA-425P8
GaAs Enchancement-mode PHEMT
Power Amplifier in 2x2 mm2 LPCC Package
Data Sheet
Description
Avago Technologies’s MGA-425P8 power amplifier is designed
for wireless application in the 2–10 GHz frequency range. The
PA has a high power efficiency (PAE) achieved through the
use of Avago Technologies’s proprietary GaAs Enhancement-
mode pHEMT process.
MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8‑lead
leadless-plastic-chip-carrier (LPCC) package. The compact foot-
print, low profile couple with the excellent thermal efficiency
of the LPCC package makes the MGA‑425P8 an ideal choice as
power amplifier that saves board space.
On-chip bias circuitry allows operation from a single +3.3V
power supply. The output of the amplifier is near to 50Ω (be-
low 2:1VSWR) around 4.9–5.8 GHz.This makes MGA-425P8 an
ideal choice as power amplifier for broadband IEEE 802.11a
system as well as other high performance wireless application
in the 2–10 GHz frequency range.
One external resistor (RBias) is used to set the bias current of
the device over a wide range.
This allows the designer to use the same part in several circuit
positions and tailor the output power/linearity performance,
and current consumption, to suit each position.
Pin Connections and Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin)
Pin 3 (NC)
2YX
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 4 (NC)
Top View
Pin 5 (RBias)
Note:
Package marking provides orientation and identification
“2Y” = Device Code
“X” = Data code indicates the month of manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
GND
Pin 8 (NC)
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Bottom View
Note:
Use Die Attach Padded for electrical grounding and thermal dissipa-
tion
Features
• Near 50Ω broadband output match
• Single +3.3V supply
• High Gain & OIP3
• Miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
• Tape-and-Reel packaging
option available
Specifications @ 5.25 GHz, 3.3V, 58 mA (typ)
• 13.3 dBm Linear Pout @ 5% EVM
• 10.3% PAE @ +13.3 dBm Pout
• 12 dBm Linear Pout @ 3% EVM
• 7.6% PAE @ + 12 dBm Pout
• 47% PAE @ P1dB
• 20.3 dBm P1dB
• 32.9 dBm OIP3
• 16 dB Gain
• 1.7 dB NF
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Simplified Schematic
Rbias
Vbias
RFin
5
2
I bias
Bias
Vd
Id= Ids + Ibias
I ds
7
RFout, VD
1, 3, 4, 6, 8
(NC)
MGA-425P8 Typical Performance Curves, Vds = 3.3V, Ids = 58 mA (at 25°C unless specified otherwise)
36
34
32
30
28
-40°C
+25°C
+85°C
26
2 2.5
3 3.5 4 4.5 5
FREQUENCY (GHz)
5.5 6
Figure 7. OIP3 vs. Temperature and
Frequency.
22
21
20
19
18
-40°C
17 +25°C
+85°C
16
2 2.5
3 3.5 4 4.5 5
FREQUENCY (GHz)
5.5 6
Figure 8. P1dB vs. Temperature and
Frequency.
22
20
18
16
14
-40°C
12 +25°C
+85°C
10
2 2.5
3 3.5 4 4.5 5
FREQUENCY (GHz)
5.5 6
Figure 9. GAIN vs. Temperature and
Frequency.
1.8
1.6
1.4
1.2
1
0.8
Vd=4V Ids=60 mA
0.6
Vd=3.3 Ids=65 mA
Vd=3.3V Ids=80 mA
0.4
0 1 2 3 4 567
FREQUENCY (GHz)
Figure 10. FMIN vs. Frequency.
7 65.5
6 65.4
5 65.3
4
EVM (%)
3 Current (mA)
65.2
65.1
2 65
1 64.9
0 64.8
-6 -4 -2 0 2 4 6 8 10 12 14 16
Pout (dBm)
Figure 11. EVM and Current vs. Pout.
4페이지 MGA-425P8 Typical Scattering Parameters (at 25°C, VDS = 3.3V, IDS= 40 mA)
Freq.
GHz Mag.
S11 Ang.
dB
MS2a1 g. Ang.
dB
MS1a2 g. Ang.
0.1 0.8 -16.1
26.67 21.547 171.2
-33.15 0.022 80
0.5 0.791 -63.6
25.06 17.9
145.4
-31.06 0.028 58.6
0.9 0.806 -98.2
23.26 14.559 125.9
-27.54 0.042 42.4
1
0.807 -105
22.79 13.783 121.9
-27.13 0.044 39.1
1.5 0.822 -131
20.55 10.655 105.6
-25.68 0.052 26.4
1.9 0.828 -145.2 18.97 8.877 95.7
-25.35 0.054 18.8
2
0.832 -148.7
18.56 8.47
93.1
-25.19 0.055 17.3
2.4 0.835 -159
17.15 7.199 85.3
-25.04 0.056 12
3
0.841 -170.8
15.32 5.836 75.2
-24.73 0.058 5.8
3.5
0.843 -178.6
14.03 5.03
68.1
-24.73 0.058 1.6
3.9 0.84 176.2
13.05 4.495 62.3
-24.73 0.058 -1.9
4
0.852 174.9
12.73 4.328 62.6
-24.73 0.058 -0.8
4.5 0.847 168.8
11.84 3.909 55.8
-24.73 0.058 -4.6
5
0.85 163.3
10.98 3.54
50.3
-24.58 0.059 -7.2
5.1 0.851 162.2
10.83 3.481 49.1
-24.58 0.059 -7.8
5.2 0.85 161.2
10.68 3.419 47.9
-24.58 0.059 -8.4
5.3 0.85 160.1
10.52 3.356 46.7
-24.44 0.06
-9.1
5.4 0.85 159.1
10.37 3.298 45.5
-24.44 0.06
-9.7
5.5 0.849 158.1
10.21 3.239 44.3
-24.44 0.06
-10.4
5.6 0.849 157.1
10.07 3.187 43
-24.44 0.06
-11
5.7 0.851 156
9.91 3.129 41.8
-24.44 0.06
-11.8
5.8 0.85 155.1
9.75 3.074 40.5
-24.44 0.06
-12.6
6
0.855 153.9
9.32 2.923 38
-24.58 0.059 -14
7
0.863 143.6
7.96 2.5
27.5
-24.73 0.058 -18.8
8
0.855 133.6
6.79 2.185 16.4
-24.15 0.062 -23.7
9
0.861 122.5
5.88 1.968 5.9
-24.58 0.059 -30.7
10 0.866 111.9
4.91 1.759 -6.8
-24.15 0.062 -36.9
11 0.875 101.7
3.65 1.523 -17.8
-25.04 0.056 -42.1
12 0.89 91.9
2.73 1.37
-28.7
-24.88 0.057 -48.7
13 0.902 83.4
1.67 1.212 -40
-25.19 0.055 -54.3
14 0.905 75.7
0.51 1.061 -50.5
-25.51 0.053 -60.6
15 0.912 68.7
-0.58 0.935 -59.6
-26.38 0.048 -64.5
16 0.899 60.3
-1.60 0.832 -69.1
-26.38 0.048 -69.9
17 0.886 52.7
-2.62 0.74
-78
-26.38 0.048 -73.8
18 0.897 44.6
-3.77 0.648 -87.6
0.04 -74.3
MagS. 22
0.655
0.579
0.469
0.443
0.339
0.274
0.264
0.226
0.193
0.176
0.177
0.17
0.168
0.165
0.163
0.163
0.165
0.166
0.165
0.165
0.167
0.169
0.178
0.191
0.188
0.217
0.258
0.286
0.34
0.392
0.435
0.468
0.5
0.529
0.555
MSG/MAG
Ang.
-8.3
-34.2
-55.3
-59.8
-79.6
-92.5
-97.4
-109.4
-126.1
-136.1
-143.3
-151.1
-154.8
-161.5
-162.4
-162.7
-163.2
-164.6
-165.7
-166.1
-166.5
-167.5
-168.2
178.9
164.8
146.6
125.7
109.9
104.1
97
92.2
88.9
84.4
78.4
69.3
34.88
28.06
25.40
24.96
23.12
22.16
21.88
21.09
20.03
19.38
18.89
18.73
18.29
17.78
17.71
17.63
17.48
17.40
17.32
17.25
17.17
17.10
16.95
16.35
15.47
13.95
12.79
11.07
11.12
10.81
9.88
9.13
7.47
5.93
5.16
Typical
Freq
Noise Parameters,
F Γmin opt
VDS
=
3.3V,
Γopt
IDS
=
40 mA
Rn/50
GHz dB
Mag.
Ang.
0.9
0.84 0.1
-125.5
0.08
1.5
0.92
0.23
-176.4
0.08
1.9
0.98
0.26
-179.7
0.07
2
0.99
0.26
-180.2
0.07
2.4
1.04
0.29
177.9
0.07
3
1.13
0.34
-179.3
0.06
3.5
1.19
0.38
-175.3
0.06
3.9
1.25
0.41
-173.3
0.06
4.5
1.33
0.46
-169.4
0.06
5
1.39
0.47
-166.5
0.06
5.2
1.42
0.48
-164.7
0.06
5.5
1.46
0.49
-162.3
0.06
5.8
1.5
0.5
-160.9
0.06
6
1.53 0.5
-158.4
0.06
7 1.66 0.52 -151 0.09
8
1.8
0.52
-141.8
0.14
9
1.93
0.54
-128.2
0.24
10
2.07 0.6
-117.3
0.32
NF @
50 dB
0.84
0.97
1.09
1.11
1.24
1.35
1.52
1.62
1.81
1.92
1.98
2.06
2.14
2.2
2.47
2.76
3.02
3.31
40
30
MSG
20
10 S21
0
MAG
-10
0 5 10 15
FREQUENCY (GHz)
Figure 18. MSG/MAG & |S21|2 vs.
Frequency at 3.3V, 40 mA.
20
Note:
1. S Parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead.
The output reference plane is at the end of the drain lead.
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MGA-425P8 | GaAs Enchancement-mode PHEMT Power Amplifier | Agilent |
MGA-425P8 | PHEMT Power Amplifier | AVAGO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |