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PDF MGA-545P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-545P8 | |
| Descripción | 50MHz to 7GHz Medium Power Amplifier | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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MGA-545P8
50 MHz to 7 GHz Medium Power Amplifier
Data Sheet
Description
Avago’s MGA-545P8 is an economical, low current, medium
power, easy-to-use GaAs MMIC amplifier that offers
excellent power output at 5.8 GHz. Although optimized for
5.8 GHz applications, the MGA-545P8 is suitable for other
applications in the 50 MHz to 7 GHz frequency range.
With the addition of a simple input match, the MGA-545P8
offers a small signal gain of 11.5 dB, a saturated power
output of 22 dBm and a saturated gain of 9.5 dB at 5.8
GHz. The MGA-545P8 has a nominal current consumption
of 92 mA in saturated mode and 135 mA in linear mode at
a device voltage of 3.3 V with power added efficiency of
46% in saturated mode.
The MGA-545P8 is housed in the 2X2 mm-8L LPCC
package. This package offers good thermal dissipation
and very good high frequency characteristics making
it appropriate for medium power applications through
7 GHz.
Pin Connections and Package Marking
PIN 8
PIN 7 (OUT)
PIN 6
PIN 5
PIN 1
PIN 2 (IN)
PIN 3
PIN 4
BOTTOM VIEW
PIN 1
IN
PIN 3
PIN 4
4Tx
PIN 8
OUT
PIN 6
PIN 5
TOP VIEW
Note: Package marking provides orientation and identification.
“4T” = Device Code
“x” = Date code indicates the month of manufacture.
Specifications
3.3 V, 92 mA, 5.825 GHz at saturation mode
22 dBm saturated power across1-7 GHz
9.5 dB gain
46% PAE
3.3 V, 135 mA, 5.825 GHz at linear mode
11.5 dB small signal gain
Pout = 16 dBm at 5.6% EVM
34 dBm OIP3 at 2.7 V
Features
Unconditionally stable
Single +3.3 V operation
Small package size: 2.0 x 2.0 x 0.75 mm3
Point MTTF > 300 years [2]
MSL-1 and Pb-free and Halogen-free
Tape-and-reel packaging option available
Applications
The MGA-545P8 is ideal for use as IF Amplifier, driver
amplifier and power amplifier in:
3-4 GHz fixed wireless access (WLL)
5-6 GHz fixed wireless access (HiperLAN/UNII)
5-6 GHz WLAN 802.11a NIC and AP
Other applications in the 50 MHz to 7 GHz frequency
range
Simplified Schematic
INPUT
BIAS
FET
OUTPUT
& Vd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RF GND
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conform to JEDEC reference outline MO229 for DRP-N.
1 page  
155
145
135
125
115
105
95
85
75
0
2.7 V
3.0 V
3.3 V
4.0 V
2 4 6 8 10 12 14
Pin (dBm)
Figure 12. Device current vs. Pin and voltage[4,5].
150
140
130
120
110 –40°C
25°C
85°C
100
2.4 2.7 3.0 3.3 3.6 3.9 4.2
VOLTAGE (V)
Figure 13. Id vs. voltage and temperature
(no RF drive).
110
100
90
80
–40°C
25°C
85°C
70
2.4 2.7 3.0 3.3 3.6 3.9 4.2
VOLTAGE (V)
Figure 14. Saturated Id vs. voltage and
temperature[3,4].
12
2.7 V
10
3.0 V
3.3 V
4.0 V
8
6
4
2
0
-10 -5
0 5 10 15 20
Pout (dBm)
Figure 15. EVM(64QAM) vs. Pout and voltage at
5.725 GHz[4].
10
9
8
7
6
5
4
3
2
1
0
-20
2.7 V
3.0 V
3.3 V
4.0 V
-15 -10 -5 0
Pin (dBm)
5 10
Figure 16. EVM(64QAM) vs. Pin and voltage at
5.725 GHz[4].
Notes:
1. Measurement was done in a 50 microstrip line with input and output tuned for maximum gain using double stub-tuners.
2. Measurement was done in a 50 microstrip line with input tuned for gain and output tuned for maximum Psat using double-stub tuners.
3. Measured at 2.5 dB gain compression.
4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain.
5. Circuit losses have been de-embedded from actual measurement.
5
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| PDF Descargar | [ Datasheet MGA-545P8.PDF ] | |
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