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Datasheet 3135GN-280LV Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 3135GN-280LV | S-Band Radar 3135GN-280LV
280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200 S pulse width, | Microsemi | data |
313 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 313-2UYC | Round Shape LED Lamps
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' Everlight Electronics led | | |
2 | 3130 | HALL-EFFECT SWITCHES Allegro MicroSystems data | | |
3 | 3132 | ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES 3132 AND 3133
ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES
These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over varying temperature and supply vol Allegro MicroSystems data | | |
4 | 3134 | BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION 3134
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made pos Allegro MicroSystems data | | |
5 | 3134 | BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION 3134
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made pos Allegro MicroSystems data | | |
6 | 3135GN-280LV | S-Band Radar 3135GN-280LV
280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200 S pulse width, Microsemi data | |
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Número de pieza | Descripción | Fabricantes | |
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