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Datasheet JCS7HN65CC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | JCS7HN65CC | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS7HN65C
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 7.0 A VDSS 650 V Rdson(@Vgs=10V) 1.35 Ω Qg 32 nC
用途
高频开关电源 电子镇流器 LED 电源
APPLICATIONS High frequency switching
mode power suppl | JILIN SINO-MICROELECTRONICS | mosfet |
JCS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | JCS10N60CT | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N60T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 600 V Rdson(@Vgs=10V) 0.75Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
2 | JCS10N60FT | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N60T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 600 V Rdson(@Vgs=10V) 0.75Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
3 | JCS10N60T | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N60T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 600 V Rdson(@Vgs=10V) 0.75Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
4 | JCS10N65BT | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N65T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High frequency switching
mode power supply z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
5 | JCS10N65CT | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N65T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High frequency switching
mode power supply z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
6 | JCS10N65FT | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N65T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High frequency switching
mode power supply z Elect JILIN SINO-MICROELECTRONICS mosfet | | |
7 | JCS10N65ST | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS10N65T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High frequency switching
mode power supply z Elect JILIN SINO-MICROELECTRONICS mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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