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부품번호 | JCS6N70VC 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS6N70C
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 6.0 A
VDSS 700 V
Rdson(@Vgs=10V) 1.6 Ω
Qg 31 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High frequency switching
mode power supply
z Electronic ballast
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 14pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 14pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS6N70VC-O-V-N-B
JCS6N70VC-R-V-N-B
JCS6N70RC-O-R-N-B
JCS6N70RC-O-R-N-A
JCS6N70CC-O-C-N-B
JCS6N70FC-O-F-N-B
JCS6N70FC-O-F2-N-B
JCS6N70SC-O-F-N-B
JCS6N70SC-O-F-N-A
JCS6N70BC-O-F-N-B
JCS6N70V
JCS6N70V
JCS6N70R
JCS6N70R
JCS6N70C
JCS6N70F
JCS6N70F
JCS6N70S
JCS6N70S
JCS6N70B
封装
Package
IPAK
IPAK
DPAK
DPAK
TO-220C
TO-220MF
TO-220MF-2
TO-263
TO-263
TO-262
无卤素
Halogen
Free
否 NO
是 YES
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
包装
Packaging
条管 Tube
条管 Tube
条管 Tube
编带 Reel
条管 Tube
条管 Tube
条管 Tube
条管 Tube
编带 Reel
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
2.19 g(typ)
1.37 g(typ)
1.37 g(typ)
1.71 g(typ)
版本:201308C
1/15
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=350V,ID=6A,RG=25Ω
(note 4,5)
延迟时间 Turn-Off delay time
td(off)
下降时间 Turn-Off Fall time
tf
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =560V ,
ID=6A
VGS =10V (note 4,5)
JCS6N70C
- 11 31 ns
- 35 80 ns
- 46 95 ns
- 40 92 ns
- 31 41 nC
- 6 - nC
- 15 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 6.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 24 A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=6.0A
- - 1.4 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=6.0A
- 345 - ns
Qrr
dIF/dt=100A/μs (note 4)
- 3.2 - μC
热特性 THERMAL CHARACTERISTIC
项目
符号
最大 Max
单位
Parameter
Symbol JCS6N70VC/RC/CC/SC/BC JCS6N70FC Unit
结到管壳的热阻
Thermal Resistance, Junction Rth(j-c)
1.04
3.2 ℃/W
to Case
结到环境的热阻
Thermal Resistance,
Junction to Ambient
Rth(j-A)
62.5
62.5 ℃/W
注释:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3 : ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, 起 始 结 温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
2 : L=14mH, IAS=6.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
5:基本与工作温度无关
版本:201411D
4/15
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS6N70CB/SB/BB/RC/VC
JCS6N70C
Transient Thermal Response Curve
For JCS6N70FC
版本:201411D
7/15
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ JCS6N70VC.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JCS6N70VC | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |