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부품번호 | JCS75N75FF 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS75N75F
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
VDSS
Rdson-max
(@Vgs=10V)
Qg-typ
产品用途
用 于 高 功 率
DC/DC 转换和功
率开关
直流电机控制和
D 类放大器
75 A
75 V
9.8 mΩ
74 nC
APPLICATIONS
High efficiency switching
DC/DC converters and
switch mode power supply
DC Motor control and
Class D Amplifier
产品特性
低栅极电荷
低Crss(典型值 55pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss(typical 55pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
JCS75N75CF-O-C-N-B
JCS75N75FF-O-F-N-B
JCS75N75SF-O-S-N-A
JCS75N75SF-O-S-N-B
JCS75N75CF
JCS75N75FF
JCS75N75SF
JCS75N75SF
TO-220C
TO-220MF
TO-263
TO-263
无卤素 包 装
Halogen Free Packaging
否 NO
否 NO
否 NO
否 NO
条管 Tube
条管 Tube
卷盘 Reel
条管 Tube
器件重量
Device
Weight
2.06 g(typ)
2.22 g(typ)
1.93 g(typ)
1.93 g(typ)
版本:201510D
1/11
R JCS75N75F
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
t dB
(on)
B
VBDDB=38V,IBDB=40A,RBGB=25Ω
- 16
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
t rB B
t dB
(off)
B
VGSB B =10V
(note 4,5)
- 54
- 55
下降时间 Turn-Off Fall time
t fB B
- 35
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Q gB B
Q gsB B
Q gdB B
VDSB B =60V ,
- 74
I DB
=40A
B
- 17 -
VGSB B =10V (note 4,5) - 22 -
ns
ns
ns
ns
nC
nC
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
ISB B - - 75 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISMB B - - 300 A
正向压降
Drain-Source Diode Forward
Voltage
V SDB B
VBGSB=0V,
I SB
=75A
B
- - 1.4 V
反向恢复时间
Reverse recovery time
t rrB B
反向恢复电荷
Reverse recovery charge
Q rrB BBB
热特性 THERMAL CHARACTERISTIC
VBGSB=0V, IBSB=75A
dIBFB/dt=100A/μs (note 4)
- 88 - ns
- 233 - nC
项目
Parameter
最大
符号
Max
Symbol
JCS75N75CF/SF JCS75N75FF
单位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.60
3.41 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=0.4mH, IBASB=75A, R =2GB B 5 Ω,起始结温TBJB=25℃
3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDSSB,起始结温
T JB
=25℃
B
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction temperature
2:L=0.4mH, IBASB=75A, RBGB=25 Ω,Starting TBJB=25℃
3:ISDB B ≤75A,di/dt ≤300A/μs,VDD≤BVBDS ,SB Starting TBJB=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201510D
4/11
4페이지 R JCS75N75F
Transient Thermal Response Curve
For JCS75N75CF/SF
1
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 Z θ J C(t)= 0 .6 0 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
P DM
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
t S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
10
Transient Thermal Response Curve
For JCS75N75FF
D = 0 .5
1
0 .2
0 .1
0 .05
0 .0 2
0 .1 0 .0 1
N o tes:
1 Z θ J C(t)= 3 .4 1 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
s in g le p u ls e
P DM
t1
t2
0 .0 1
1E -5
1E -4
1E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
版本:201510D
7/11
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ JCS75N75FF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
JCS75N75F | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
JCS75N75FF | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |