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PDF JCS65N20T Data sheet ( Hoja de datos )
| Número de pieza | JCS65N20T | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de JCS65N20T (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS65N20T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
VDSS
Rdson-max
（@Vgs=10V）
Qg-typ
用途
高频开关电源
电子镇流器
UPS 电源
65A
200 V
32mΩ
120nC
APPLICATIONS
High frequency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
产品特性
低栅极电荷
低 Crss
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS65N20ABT-O-AB-N-B JCS65N20ABT
封装
Package
TO-3PB
无卤素
Halogen
Free
否 NO
包装
Packaging
条管 Tube
器件重量
Device
Weight
5.14g (typ)
版本：201510C
1/8
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS65N20T
On-Region Characteristics
100
10
VGS
Top 15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
0.1
0.1
Notes:
1. 250μs pulse test
2. TC=25℃
1 10
V D S [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
0.06
0.05
Transfer Characteristics
100
10
150℃
25℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
0.04 VGS=10V
0.03
VGS=20V
0.02
0.01
0
20 40 60
Note:Tj=25℃
80 100 120 140 160
I D [A]
Capacitance Characteristics
25℃
1
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VS D [V]
Gate Charge Characteristics
1.1
7x103
6x103
5x103
4x103
3x103
2x103
1x103
0
100
12
Ciss=Cgs+Cgd(Cds=shorted)
Ciss
Coss=Cds+Cgd
Crss=Cgd
10
Coss
8
6
4
Crss
2
101
V DS Drain-Source Voltage [V]
0
0
VDS=40V
VDS=100V
VDS=160V
Notes:
ID=65A
20 40 60 80 100 120 140
Qg Toltal Gate Charge [nC]
版本：201510C
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JCS65N20T.PDF ] | |
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