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부품번호 | STAP85025S 기능 |
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기능 | N-channel enhancement-mode lateral MOSFETs | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 13 페이지수
STAP85025S
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
STAP1
Figure 1. Pin connection
Drain
Description
The STAP85025S is a common source N-
channel, enhancement-mode lateral field-effect
RF power transistor. It is designed for high gain,
broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at a frequency up to 1 GHz. The
STAP85025S boasts the excellent gain, linearity
and reliability of ST’s latest LDMOS technology
mounted in STAP® ST advanced PowerSO-10
RF package. The STAP85025S superior linearity
performance makes it an ideal solution for the car
mobile radio.
The STAP® ST plastic package has been
designed to offer high reliability and high power
capability. It has been specially optimized for RF
needs and offers excellent RF performance and
ease of assembly.
Gate
Source
Features
• Excellent thermal stability
• Common source configuration
• POUT = 25 W with 15.7 dB gain @ 870 MHz /
13.6 V
• Plastic package
• ESD protection
• In compliance with the 2002/95/EC European
directive
Table 1. Device summary
Order code
Marking
Package
STAP85025S
STAP85025S
STAP1
Packing
Tube
December 2015
This is information on a product in full production.
DocID15795 Rev 5
1/13
www.st.com
Electrical characteristics
2 Electrical characteristics
STAP85025S
2.1
2.2
TCASE = +25 °C
Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 5 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Table 4. Static
Test conditions
Min. Typ. Max. Unit
VDS = 25 V
VDS = 0 V
ID = 300 mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
-
1
1
4.1
0.27 0.31
55
40
1.5
µA
µA
V
V
pF
pF
pF
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P3dB
GP
hD
Load
mismatch
VDD = 13.6 V, IDQ = 300 mA, f = 870 MHz
VDD = 13.6 V, IDQ = 300 mA, POUT = 10 W, f = 870 MHz
VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 870 MHz
VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 870 MHz
all phase angles
25
15
60
20:1
30
17.3
66
W
- dB
%
VSWR
2.3 ESD protection characteristics
Table 6. ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
4/13 DocID15795 Rev 5
4페이지 STAP85025S
Figure 6. DC output characteristics
(Tamb = 60 °C)
6
Tamb = + 60 °C
5
4
3
2
1
0
0 2 4 6 8 10 12
V D S[ V ]
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Typical performance
Figure 7. Gain vs. output power and
bias current
20
19 Idq = 100mA Idq = 200mA Idq = 300mA
18
17
16
15
14
13 Freq = 870 MHz
12 Vdd = 13.6V
11
10
0 5 10 15 20 25 30 35
OInuptuptupot wpeorw(Wer) (W)
Figure 8. Output power and efficiency vs. input Figure 9. Output power and drain current vs.
power
gate voltage
40
35
30
25
20
15
10
5
0
0.0
80
70
60
50
Freq = 870 MHz
Vdd = 13.6V
Idq = 300 mA
40
30
20
Pout Eff 10
0.5 1.0 1.5 2.0
Input power (W)
0
2.5
32
28 Freq = 870MHz
Pin = 0.4W
24 Idq = 300mA
20
16
12
8
4
0
012
3
Vgs (V)
Pout Id
45
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
6
DocID15795 Rev 5
7/13
13
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부품번호 | 상세설명 및 기능 | 제조사 |
STAP85025 | Transistors | ST Microelectronics |
STAP85025S | N-channel enhancement-mode lateral MOSFETs | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |