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부품번호 | STPTIC-33G2 기능 |
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기능 | tunable integrated capacitor | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 11 페이지수
STPTIC-33G2
Parascan™ tunable integrated capacitor
6737,&
:/&63PPSLWFK
Features
• High power capability
• 5:1 tuning range
• High linearity
• High quality factor (Q)
• Low leakage current
• Compatible with high voltage control IC
(STHVDAC series)
• Available in wafer level chip scale package:
– WLCSP package 0.61 x 0.66 x 0.3 mm
• ECOPACK®2 compliant component
Benefit
• RF tunable passive implementation in mobile
phones to optimize antenna radiated
performance
Applications
• Cellular antenna open loop tunable matching
network in multi-band GSM/WCDMA/LTE
mobile phone
• Open loop tunable RF filters
Datasheet - production data
Description
The ST integrated tunable capacitor offers
excellent RF performance, low power
consumption and high linearity required in
adaptive RF tuning applications. The fundamental
building block of PTIC is a tunable material called
Parascan™, which is a version of barium
strontium titanate (BST) developed by Paratek
Microwave.
BST capacitors are tunable capacitors intended
for use in mobile phone application and dedicated
to RF tunable applications. These tunable
capacitors are controlled through an extended
bias voltage ranging from 1 to 24 V. The
implementation of BST tunable capacitor in
mobile phones enables significant improvement
in terms of radiated performance making the
performance almost insensitive to the external
environment.
Figure 1. PTIC functional block diagram
37,&
5) 5)
%LDV
July 2015
This is information on a product in full production.
TM: Parascan is a trademark of Paratek Microwave Inc.
DocID028149 Rev 1
1/11
www.st.com
Electrical characteristics
STPTIC-33G2
Figure 2. Capacitor variation versus bias
voltage
Figure 3. Quality factor versus frequency
&S)
(
(
(
(
(
(
(
(
(
(
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(
4XDOLW\IDFWRU
9 9
)0+]
Figure 4. Harmonic power versus bias voltage Figure 5. Harmonic power versus bias voltage
(series)
(shunt)
+DUPRQLFSRZHUGEPSLQ GEPDW0+]
+DUPRQLFSRZHUGEPSLQ GEPDW0+]
%LDVYROWDJH9 %LDVYROWDJH9
+VHULH +VHULH
+VKXQW +VKXQW
Figure 6. Third order intercept point (IP3)
UGRUGHULQWHUFHSWSRLQWGEPDW0+]
%LDVYROWDJH9
,3VKXQW ,3VHULH
4/11 DocID028149 Rev 1
4페이지 STPTIC-33G2
Package information
Figure 10. Flip-Chip marking
7RSYLHZ
EDOOVGRZQ
%RWWRPYLHZ
EDOOVXS
$ $
% %
Table 7. Pinout description
Pad / ball number
Pin name
A1 DC bias
B1 RF2
A2 NC
B2 RF1
1. When connected in shunt, please connect RF2 (B1 ball) to GND
Description
DC bias voltage
RF input / output(1)
Not connected
RF input / output
DocID028149 Rev 1
7/11
11
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다운로드 | [ STPTIC-33G2.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STPTIC-33G2 | tunable integrated capacitor | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |