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부품번호 | 81N16 기능 |
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기능 | VOLTAGE DETECTORS | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
전체 16 페이지수
UNISONIC TECHNOLOGIES CO., LTD
81CXX/81NXX
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
CMOS IC
DESCRIPTION
The UTC 81CXX and 81NXX series are good performance
voltage detector and manufactured by CMOS technologies with
highly accurate, low power consumption. A delay circuit is built-in
to each detector, therefore, peripherals are unnecessary and high
density mounting is possible. Detect voltage is extremely accurate
with minimal temperature drift. Both CMOS and N-channel open
drain output configurations are available.
FEATURES
* Highly Accurate:
Detect voltage ± 2%
* Built-In Delay time :
1ms ~ 50ms
50ms ~ 200ms
200ms ~ 400ms
* Detect Voltage Temperature
Characteristics:
TYP± 100ppm/°C
* Wide Operating Voltage Range : 0.7V ~ 10.0V
* Low Current Consumption :
TYP 1.0μA (VIN=2.0V)
ORDERING INFORMATION
CMOS:
Ordering Number
Lead Free
Halogen Free
- 81CXXG-①-AA3-B-R
- 81CXXG-①-AB3-E-R
- 81CXXG-①-AE3-3-R
- 81CXXG-①-AE3-5-R
- 81CXXG-①-AE3-2-R
81CXXL-①-T92-D-B 81CXXG-①-T92-D-B
81CXXL-①-T92-E-B 81CXXG-①-T92-E-B
81CXXL-①-T92-D-K 81CXXG-①-T92-D-K
81CXXL-①-T92-E-K 81CXXG-①-T92-E-K
①:Delay Time
Duration Code
1~50 ms
50~200 ms
200~400 ms
P
Q
R
Package
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
TO-92
TO-92
TO-92
Pin Assignment
123
OG I
OIG
OG I
GO I
I OG
I GO
OIG
I GO
OIG
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 16
QW-R502-039.U
81CXX/81NXX
BLOCK DIAGRAM
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 16
QW-R502-039.U
4페이지 81CXX/81NXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
MIN TYP MAX UNIT
Detect Voltage
VDF 1
VDF (T)
×0.98
VDF (T)
VDF (T)
×1.02
V
Hysteresis Range
VHYS
1
VDF
VDF
VDF
×0.02 ×0.05 ×0.08
V
Operating Voltage
Supply Current
VIN 1 VDF=1.6V ~ 6.0V
ISS 2 VIN=5.0V
0.7 10.0 V
2.0 4.2 μA
N-Channel
3 VDS=0.5V, VIN =5.0V
Output Current P- Channel
IOUT
4
VDS=2.1V, VIN=8.0V
(CMOS output)
13.0
-15.4
mA
mA
VDF
Temperature Characteristics
∆VDF
∆TOPR × VDF
±100
ppm/°C
Transient Delay Time
(VDR VOUT inversion)
tDLY *
5
VIN changes from
0.6V ~ 10V
50
200 ms
VDF (T): established detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 16
QW-R502-039.U
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
81N16 | VOLTAGE DETECTORS | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |