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부품번호 | 88N24 기능 |
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기능 | BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
88NXX
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
DESCRIPTION
The UTC 88NXX is a high-precision voltage detector developed
basing on CMOS technology. The detection voltage is fixed internally. A
time delayed reset can be accomplished with an external
capacitor. N-ch open-drain output form is available.
The UTC 88NXX is generally used for power supply monitor of
portable equipment such as notebook PCs, digital still cameras, PDAs,
and mobile phones, constant voltage power monitor of cameras, video
equipment and communication equipment, and power monitor or reset of
CPUs and microcomputers.
FEATURES
* Extremely Low Current Dissipation :
1.2μA Typ. (Detection Voltage ≥ 1.5 V @ VDD=3.5 V)
* ±2.0 % Accuracy Detection Voltage
* Hysteresis Characteristics: 5% TYP
* Detection Voltage varies from 1.5V to 6.0V with 0.1V step
* Output Forms: N-ch open-drain output (when it is in Active-Low)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
88NXXL-AD4-R
88NXXG-AD4-R
- 88NXXG-AF5-R
Note: XX: Output Voltage, refer to Marking Information.
Package
SOT-143
SOT-25
CMOS IC
Packing
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-368.G
88NXX
CMOS IC
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Power Supply Voltage
CD pin Input Voltage
VDD - VSS
VCD
12
VSS -0.3 ~ VDD+0.3
V
V
Output Voltage
Output Current
VOUT
IOUT
VSS -0.3 ~ VSS +12
50
V
mA
Power Dissipation
SOT-143
SOT-25
PD
150 mW
250 mW
Operating Temperature
Storage Temperature
TOPR
TSTG
-40 ~ +85
-40 ~ +125
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Detection Voltage: 1.4V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-VDET
VHYS
ISS
VDD
IOUT
ILEAK
∆ - VDET
∆Ta × -VDET
tD
TEST
CIRCUIT
TEST CONDITIONS
MIN TYP MAX
1
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
1
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
2 VDD= 2.0V
1
2.5
0.95 10.0
3
Output transistor
Nch, VDS=0.5V,VDD=0.95V
0.23
0.64
3
Output transistor
Nch, VDS=10V, VDD=10V
0.1
UNIT
V
V
μA
V
mA
μA
1 TA=-40°C ~ +85°C
±100 ±350 ppm/°C
4 VDD= 2V, CD=4.7 nF
20
42 ms
Detection Voltage: 1.8V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-VDET
VHYS
ISS
VDD
IOUT
ILEAK
∆ - VDET
∆Ta × -VDET
tD
TEST
CIRCUIT
1
TEST CONDITIONS
1
2 VDD=3.5V
1
3
Output transistor
Nch, VDS=0.5V,VDD=1.2V
3
Output transistor
Nch, VDS=10V, VDD=10V
1 TA=-40°C ~ +85°C
4 VDD=3.5V, CD=4.7 nF
MIN TYP MAX UNIT
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
2.8
0.95 10.0
V
V
μA
V
0.59 1.36
mA
0.1 μA
±100 ±350 ppm/°C
20 42 ms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-368.G
4페이지 88NXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)
Detection Voltage: 3.3V
PARAMETER
SYMBOL
TEST
CIRCUIT
TEST CONDITIONS
MIN TYP MAX UNIT
Detection Voltage (Note 1)
-VDET
1
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
V
Hysteresis Width
VHYS
1
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
V
Current Consumption
ISS 2 VDD=4.5V
5 μA
Operating Voltage
VDD
1
0.95
10.0 V
Output Current
IOUT
3
Output transistor
Nch, VDS=0.5V, VDD=2.4V
2.88
4.98
mA
Leakage Current
ILEAK
Detection Voltage Temperature ∆ - VDET
Coefficient (Note 2)
∆Ta × -VDET
3
Output transistor
Nch, VDS=10V, VDD=10V
1 TA=-40°C ~ +85°C
0.1 μA
±100 ±350 ppm/°C
Delay Time
tD
4 VDD=4.5V, CD=4.7 nF
12
34 ms
Note:
1.
-VDET: Actual detection voltage
-VDET(S): Specified detection voltage
2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation:
-VDET
TA
[m V/C] (1)
-VDET (T yp.)[ V ](2)
-V DET
T A -VDET
[ppm / C](3)
1000
(1) Temperature change ratio of the detection voltage
(2) Specified detection voltage
(3) Detection voltage temperature coefficient
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-368.G
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
88N21 | BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR | Unisonic Technologies |
88N24 | BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |