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BUK7K5R1-30E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7K5R1-30E
기능 Dual N-channel MOSFET
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BUK7K5R1-30E 데이터시트, 핀배열, 회로
BUK7K5R1-30E
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 30 V
- - 40 A
- - 68 W
- 4.34 5.1 mΩ
- 9 - nC
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BUK7K5R1-30E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7K5R1-30E
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET
103
IAL
(A)
102
10
1
10-1
003aaj671
(1)
(2)
(3)
10-2
10-3
10-2
10-1
1 10
tAL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and
FET2
103
ID
(A)
102
10
1
Limit RDSon = VDS / ID
DC
003aaj642
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
BUK7K5R1-30E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
Min Typ Max Unit
- - 2.21 K/W
© NXP N.V. 2013. All rights reserved
4 / 13

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BUK7K5R1-30E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7K5R1-30E
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET
40 10
ID
(A)
6 5.5
30
20
003aaj644
5
300
ID
(A)
250
200
150
003aaj647
100
10
4.5
50
Tj = 175 °C
Tj = 25 °C
Fig. 8.
VGS(V) = 4
0
0 1 2 VDS(V) 3
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 9.
0
0 3 6 9 12
VGS(V)
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10-1
ID
(A)
10-2
003aah028
5
VGS(th)
(V)
4
003aah027
max
10-3 min typ max
3 typ
10-4
2 min
10-5
1
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
-60 0 60 120 180
Tj (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
BUK7K5R1-30E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
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BUK7K5R1-30E

Dual N-channel MOSFET

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