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BUK7K8R7-40E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7K8R7-40E
기능 Dual N-channel MOSFET
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BUK7K8R7-40E 데이터시트, 핀배열, 회로
BUK7K8R7-40E
Dual N-channel 40 V, 8.5 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 15 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
[1] - - 30 A
- - 53 W
- 7 8.5 mΩ
- 7.8 - nC
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BUK7K8R7-40E pdf, 반도체, 판매, 대치품
NXP Semiconductors
102
IAL
(A)
10
BUK7K8R7-40E
Dual N-channel 40 V, 8.5 mΩ standard level MOSFET
003aal015
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
Limit RDSon = VDS / ID
DC
003aal016
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
BUK7K8R7-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
Min Typ Max Unit
- - 2.84 K/W
- 95 - K/W
© NXP N.V. 2013. All rights reserved
4 / 13

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BUK7K8R7-40E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7K8R7-40E
Dual N-channel 40 V, 8.5 mΩ standard level MOSFET
80
ID
(A)
64
48
003aal021
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
32 10-4
16
175°C
Tj = 25°C
0
02468
VGS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
10-5
10-6
0246
VGS(V)
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
5
VGS(th)
(V)
4
3
003aah027
max
typ
50
RDSon
40
30
4.5 V 5 V 5.5 V
003aal022
6V
2 min
20
6.5 V
1 10 8 V
VGS = 10 V
0
-60 0 60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
0
0 10 20
Tj = 25 °C; tp = 300 μs
30
ID (A)
40
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7K8R7-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
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BUK7K8R7-40E

Dual N-channel MOSFET

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