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부품번호 | DMT6016LSS 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 6 페이지수
DMT6016LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON) max
18mΩ @ VGS = 10V
28mΩ @ VGS = 4.5V
ID max
TA = +25°C
9.2 A
7.5 A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load Switch
• Adaptor Switch
• Notebook PC
SO-8
S
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish Matte Tin annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.076 grams (approximate)
D
D
Pin1 S D
G
SD
Top View
GD
Pin-Out
Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT6016LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
NT36001166LLS
YY WW
14
= Manufacturer’s Marking
T6016LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
DMT6016LSS
Document number: DS37237 Rev. 4 - 2
1 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMT6016LSS
3
2.5
2 ID = 1mA
ID = 250µA
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
TA = 150°C
1000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
1
0.1
0
5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10
8
6 VDS = 30V
ID = 10A
4
2
00 2 4 6 8 10 12 14 16 18
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
30
27
24
21
18
15
12
TA = 150°C
9
6 TA = 125°C
TA = 85°C
TA = 25°C
3 TA = -55°C
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
1000
100
10
Ciss
Coss
Crss
f = 1MHz
1
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RDS(on)
Limited
40
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
PW = 10ms
PW = 1ms
PW = 100µs
0.01 DUT on 1 * MRP Board
0.01 0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMT6016LSS
Document number: DS37237 Rev. 4 - 2
4 of 6
www.diodes.com
September 2014
© Diodes Incorporated
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부품번호 | 상세설명 및 기능 | 제조사 |
DMT6016LSS | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |