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DMT8012LFG 데이터시트 PDF




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부품번호 DMT8012LFG 기능
기능 N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT8012LFG 데이터시트, 핀배열, 회로
DMT8012LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
80V
RDS(ON) max
16m@ VGS = 10V
22m@ VGS = 6V
ID max
TC = +25°C
35A
30A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
S Pin 1
S
S
G
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC/DC converts
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (approximate)
D
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT8012LFG-7
DMT8012LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SG8
SG8 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
DMT8012LFG
Document number: DS36606 Rev. 3 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated




DMT8012LFG pdf, 반도체, 판매, 대치품
0.03
0.025
0.02
VGS = 6V
ID = 6A
0.015
0.01
VGS = 10V
ID = 12A
0.005
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
30
25
20
TA = 150°C
15
TA = 125°C
10
TA = 85°C
5
TA = 25°C
TA = -55°C
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
9
8
7
6
5
VDS = 40V
ID = 12A
4
3
2
1
0 0 5 10 15 20 25 30 35
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMT8012LFG
2.5
2.3
2.1
1.9
ID = 1mA
1.7
ID = 250µA
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
1000
Ciss
Coss
100
Crss
10
f = 1MHz
1
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
100
10
RDS(on)
Limited
DC
1 PW = 10s
PW = 1s
PW = 100ms
0.1 PW = 10ms
PW = 1ms
PW = 100µs
0.01
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
0.001 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMT8012LFG
Document number: DS36606 Rev. 3 - 2
4 of 6
www.diodes.com
July 2014
© Diodes Incorporated

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부품번호상세설명 및 기능제조사
DMT8012LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

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