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PDF CS202-4B-2 Data sheet ( Hoja de datos )
| Número de pieza | CS202-4B-2 | |
| Descripción | 4.0 AMP SCR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
4.0 AMP SCR
200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS202-4B-2 series
type is an epoxy molded silicon controlled rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CS202
SYMBOL -4B-2
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=85°C)
IT(RMS)
Peak One Cycle Surge (t=10ms)
ITSM
I2t Value for Fusing (t=10ms)
I2t
Peak Gate Power (tp=20μs)
Average Gate Power Dissipation
Peak Gate Current (tp=20μs)
Critical Rate of Rise of On-State Current
PGM
PG(AV)
IGM
di/dt
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Tstg
TJ
ΘJA
ΘJC
CS202
-4D-2
400
CS202
-4M-2
600
4.0
30
4.5
3.0
0.2
1.2
50
-40 to +150
-40 to +125
80
7.5
CS202
-4N-2
800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IGT VD=12V, RL=10Ω
20
IH IT=50mA, RGK=1.0KΩ
VGT
VD=12V, RL=10Ω
VTM
ITM=8.0A, tp=380μs
dv/dt
VD=⅔ VDRM, RGK=1.0KΩ, TC=125°C
TYP
38
0.25
0.55
1.6
10
MAX
10
200
200
2.0
0.8
1.8
UNITS
V
A
A
A2s
W
W
A
A/μs
°C
°C
°C/W
°C/W
UNITS
μA
μA
μA
mA
V
V
V/μs
R2 (23-April 2012)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CS202-4B-2.PDF ] | |
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