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PDF SFA1607G Data sheet ( Hoja de datos )
| Número de pieza | SFA1607G | |
| Descripción | 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode | |
| Fabricantes | Thinki Semiconductor | |
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Hay una vista previa y un enlace de descarga de SFA1607G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SFA1601G thru SFA1608G
®
SFA1601G thru SFA1608G
Pb Free Plating Product
Pb
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approxiamtely
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Positive
Suffix "G"
Negative
Suffix "GR"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol SFA
1601G
VRRM
VRMS
VDC
50
35
50
SFA SFA
1602G 1603G
100 150
70 105
100 150
SFA
1604G
200
140
200
SFA
1605G
300
210
300
SFA
1606G
400
280
400
SFA
1607G
500
350
500
SFA
1608G
600
420
600
IF(AV)
16
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum Reverse Current @ Rated VR TA=25 ℃
T A=100 ℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
IFSM
VF
IR
Trr
Cj
RθjC
TJ
TSTG
0.975
130
200
1.3
10
400
35
1
- 65 to + 150
- 65 to + 150
1.7
100
Unit
V
V
V
A
A
V
uA
nS
pF
℃/W
℃
℃
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/
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| PDF Descargar | [ Datasheet SFA1607G.PDF ] | |
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