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PDF BAV99 Data sheet ( Hoja de datos )
| Número de pieza | BAV99 | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV99 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23.
Low Forward Voltag : VF=0.9V(Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
VRM
VR
IF
IFSM
PD
85
80
250
2
225*
300**
Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
UNIT
V
V
mA
A
mW
BAV99
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
3
21
SOT-23
Marking
Type Name
H8
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR
CT
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
0.9
1.6
MAX.
-
-
1.25
0.5
3.0
4.0
UNIT
V
A
pF
nS
2011. 8. 10
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAV99.PDF ] | |
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