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부품번호 | 2N6036G 기능 |
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기능 | Plastic Darlington Complementary Silicon Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G, 2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCEO
Vdc
40
60
80
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCBO
Vdc
40
60
80
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
ICM
IB
PD
5.0 Vdc
4.0 Adc
8.0 Apk
100 mAdc
40 W
320 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
3.12
83.3
Unit
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
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4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
NPN
COLLECTOR 2, 4
PNP
COLLECTOR 2, 4
BASE
3
BASE
3
EMITTER 1
2N6038
2N6039
EMITTER 1
2N6034
2N6035
2N6036
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
2N6035/D
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ACTIVE−REGION SAFE−OPERATING AREA
1.0
7.0
5.0
5.0 ms
1.0 ms
100 ms
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
2N6036
2N6035
7.0 10
20 30
50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. 2N6035, 2N6036
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
dc
1.0 ms
100 ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
2N6039
2N6038
7.0 10
20 30
50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6038, 2N6039
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TC = 25°C
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2 0.4 0.6 1.0 2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
20
40
PNP
2N6034, 2N6035, 2N6036
6.0 k
TC = 125°C
4.0 k
3.0 k
25°C
2.0 k
VCE = 3.0 V
NPN
2N6038, 2N6039
6.0 k
TJ = 125°C
4.0 k
3.0 k
2.0 k
25°C
VCE = 3.0 V
- 55°C
- 55°C
1.0 k 1.0 k
800 800
600 600
400
300
0.04 0.06
0.1 0.2 0.4 0.6 1.0 2.0 4.0
400
300
0.04 0.06
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
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부품번호 | 상세설명 및 기능 | 제조사 |
2N6036 | Complementary power Darlington transistors | STMicroelectronics |
2N6036 | (2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |