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MJE13005D 데이터시트 PDF




KEC에서 제조한 전자 부품 MJE13005D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MJE13005D 기능
기능 TRIPLE DIFFUSED NPN TRANSISTOR
제조업체 KEC
로고 KEC 로고


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MJE13005D 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
800
400
10
5
10
2
75
150
-55 150
V
V
V
A
A
W
Equivalent Circuit
C
B
A
F
EG
B
Q
I
K
M
L
D
NN
123
J
O
C
P
H
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Emitter Cut-off Current
DC Current Gain
IEBO
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
VBE(sat)
Cob
fT
ton
tstg
tf
VF
*Reverse recovery tims (di/dt=10A/ S)
trr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
E
TEST CONDITION
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=1MHz
VCE=10V, IC=0.5A
300µS
IB1
INPUT IB1
IB2 IB2
IB1=0.4A, IB2=-1A
DUTY CYCLE <= 2%
IF=2A
IF=0.4A
IF=1A
IF=2A
OUTPUT
VCC =300V
MIN.
-
18
8
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
10
35
-
0.5
0.6
1
1.2
1.6
-
-
UNIT
A
V
V
pF
MHz
- 0.15
S
2-5
S
-
- 0.8
S
- - 1.6 V
- 800 -
nS
- 1.4 -
S
- 1.9 -
S
2009. 2. 26
Revision No : 4
1/4




MJE13005D pdf, 반도체, 판매, 대치품
MJE13005D
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
LC
(3)
IB1
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
VBB
T.U.T
(1)
IB
RBB(2)
-
+
IC
VCE
VClamp
VCC
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2009. 2. 26
Revision No : 4
4/4

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