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부품번호 | MJE13005D 기능 |
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기능 | TRIPLE DIFFUSED NPN TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
전체 4 페이지수
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
800
400
10
5
10
2
75
150
-55 150
V
V
V
A
A
W
Equivalent Circuit
C
B
A
F
EG
B
Q
I
K
M
L
D
NN
123
J
O
C
P
H
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Emitter Cut-off Current
DC Current Gain
IEBO
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
VBE(sat)
Cob
fT
ton
tstg
tf
VF
*Reverse recovery tims (di/dt=10A/ S)
trr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
E
TEST CONDITION
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=1MHz
VCE=10V, IC=0.5A
300µS
IB1
INPUT IB1
IB2 IB2
IB1=0.4A, IB2=-1A
DUTY CYCLE <= 2%
IF=2A
IF=0.4A
IF=1A
IF=2A
OUTPUT
VCC =300V
MIN.
-
18
8
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
65
-
MAX.
10
35
-
0.5
0.6
1
1.2
1.6
-
-
UNIT
A
V
V
pF
MHz
- 0.15
S
2-5
S
-
- 0.8
S
- - 1.6 V
- 800 -
nS
- 1.4 -
S
- 1.9 -
S
2009. 2. 26
Revision No : 4
1/4
MJE13005D
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
LC
(3)
IB1
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
VBB
T.U.T
(1)
IB
RBB(2)
-
+
IC
VCE
VClamp
VCC
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2009. 2. 26
Revision No : 4
4/4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MJE13005 | TRANSISTORS | SI Semiconductors |
MJE13005 | 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |