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부품번호 | STD10P10F6 기능 |
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기능 | P-CHANNEL POWER MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 15 페이지수
STD10P10F6
P-channel 100 V, 0.136 Ω typ., 10 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD10P10F6
VDSS
100 V
RDS(on) max
0.18 Ω
ID
10 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STD10P10F6 10P10F6 DPAK Tape and reel
For the P-channel Power MOSFET the
actual polarity of the voltages and the
current must be reversed.
October 2014
DocID026365 Rev 2
This is information on a product in full production.
1/15
www.st.com
Electrical characteristics
STD10P10F6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4: Static
Test conditions
V(BR)DSS
Drain-source breakdown
Voltage
VGS= 0, ID = 250 µA
IDSS
Zero gate voltage drain
current
VGS = 0, VDS = 100 V
VGS = 0, VDS = 100 V, Tc =
125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VDS = 0, VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5 A
Min. Typ. Max. Unit
100 V
1 µA
10 µA
±100 nA
2 4V
0.136 0.18 Ω
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Table 5: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 80 V, f=1 MHz,
VGS = 0
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80 V, ID = 10 A
VGS = 10 V
Min.
-
-
-
-
-
-
Typ.
864
45
25
16.5
3.5
3.8
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
Symbol
td(on)
tr
td(off)
tf
Table 6: Switching on/off (inductive load)
Parameter
Test conditions
Min.
Turn-on delay time
-
Rise time
Turn-off delay time
VDD = 80 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
-
-
Fall time
-
Typ.
10.5
4.8
24
4.5
Max.
-
-
-
-
Unit
ns
ns
ns
ns
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
4/15 DocID026365 Rev 2
4페이지 STD10P10F6
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance
RDS(on)
(norm)
GIPG270520141149SA
2.5 VGS=10V
Figure 11: Normalized V(BR)DSS vs temperature
2
1.5
1
0.5
0
-75 -25 25 75 125 TJ(°C)
Figure 12: Source-drain diode forward characteristics
DocID026365 Rev 2
7/15
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부품번호 | 상세설명 및 기능 | 제조사 |
STD10P10F6 | P-CHANNEL POWER MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |