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STD85N10F7AG PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STD85N10F7AG
기능 N-CHANNEL POWER MOSFET
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STD85N10F7AG 데이터시트, 핀배열, 회로
STD85N10F7AG
Automotive-grade N-channel 100 V, 0.0085 typ., 70 A
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
TAB
3
1
DPAK
Features
Order code
VDS
RDS(on)
max
STD85N10F7AG 100 V 0.010
ID
70 A
PTOT
85 W
Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Figure 1. Internal schematic diagram
Applications
Switching applications
' 7$%
* 
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6 
$0Y
Order code
STD85N10F7AG
Table 1. Device summary
Marking
Package
85N10F7
DPAK
Packing
Tape and reel
May 2015
This is information on a product in full production.
DocID027030 Rev 2
1/16
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STD85N10F7AG pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. Static
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
ID = 250 µA, VGS = 0
VDS = 100 V
VDS = 100 V, TC=125 °C
VGS = 20 V
VDS = VGS, ID = 250 µA
ID = 40 A, VGS=10 V
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 50 V, f = 1 MHz,
VGS = 0
VDD = 50 V, ID = 70 A,
VGS = 10 V
(see Figure 14)
STD85N10F7AG
Min. Typ. Max. Unit
100 V
1
µA
100
100 nA
2.5 3.5 4.5 V
0.0085 0.010
Min. Typ. Max. Unit
- 3100 -
- 700 -
- 45 -
pF
- 45 -
- 18 - nC
- 13 -
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 50 V, ID = 40 A,
RG = 4.7 , VGS = 10 V
(see Figure 15 and Figure 18)
Min. Typ. Max. Unit
- 19 -
- 32 -
ns
- 36 -
- 13 -
4/16 DocID027030 Rev 2

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STD85N10F7AG 전자부품, 판매, 대치품
STD85N10F7AG
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
(pF)
3500
3000
2500
2000
1500
1000
AM15975v1
Ciss
VGS(th)
(norm)
1.2
1
0.8
0.6
0.4
ID=250µA
AM15976v1
500
0
0
20 40
Coss
Crss
60 80 VDS(V)
0.2
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 10. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
ID=40A
VGS=10V
AM15977v1
1.5
1
0.5
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 12. Normalized VDS vs temperature
VDS
(norm)
1.04
ID=1mA
AM15979v1
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 11. Source-drain diode forward
characteristics
VSD
(V)
1.1
1
TJ=-55°C
AM15978v1
0.9
0.8
0.7
0.6
0.5
0
TJ=150°C
TJ=25°C
20 40 60 80
ISD(A)
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STD85N10F7AG

N-CHANNEL POWER MOSFET

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