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부품번호 | STE145N65M5 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 13 페이지수
STE145N65M5
N-channel 650 V, 0.012 Ω typ., 143 A MDmesh™ M5
Power MOSFET in an ISOTOP package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @ TJmax RDS(on) max.
ID
STE145N65M5
710 V
0.015 Ω 143 A
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STE145N65M5
Table 1: Device summary
Marking
Package
145N65M5
ISOTOP
Packaging
Tube
November 2015
DocID025538 Rev 2
This is information on a product in full production.
1/13
www.st.com
Electrical characteristics
STE145N65M5
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: On/off states
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage
IDSS Zero gate voltage drain current
IGSS
VGS(th)
RDS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = 0 V, ID = 1 mA
650
VGS = 0 V,
VDS = 650 V
10
VGS = 0 V, VDS =
650 V, TC = 125 °C
100
VDS = 0 V,
VGS = ±25 V
±100
VDS = VGS, ID = 250 µA 3
4
5
VGS = 10 V, ID = 69 A
0.012 0.015
V
µA
µA
nA
V
Ω
Symbol
Parameter
Table 5: Dynamic
Test conditions
Ciss
Coss
Crss
Co(er)(1)
Co(tr)(2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
energy related
Equivalent output capacitance
time related
VDS= 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0, VDS = 0 to 520 V
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, open drain
VDD = 520 V, ID = 69 A,
VGS = 10 V (see Figure
15: "Test circuit for gate
charge behavior")
Min. Typ. Max. Unit
- 18500 - pF
- 413 - pF
- 11 - pF
- 415 - pF
- 1950 - pF
- 0.7 - Ω
- 414 - nC
- 114 - nC
- 164 - nC
Notes:
(1)Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS
(2)Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases
from 0 to 80% VDSS
4/13 DocID025538 Rev 2
4페이지 STE145N65M5
Figure 8: Capacitance variations
C
(pF)
100000
10000
Ciss
1000
100
f=1 MHz
Coss
10
1
0.1
1
Crss
10 100 VDS(V)
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Switching losses vs gate
resistance
The previous figure Eon includes reverse recovery of a SiC diode.
DocID025538 Rev 2
7/13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STE145N65M5 | N-CHANNEL POWER MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |